生命周期: | Obsolete | 零件包装代码: | TO-220AC |
针数: | 3 | Reach Compliance Code: | compliant |
风险等级: | 5.84 | 配置: | SINGLE |
二极管类型: | RECTIFIER DIODE | 最大正向电压 (VF): | 1.8 V |
最大非重复峰值正向电流: | 110 A | 元件数量: | 1 |
最高工作温度: | 175 °C | 最大输出电流: | 4 A |
最大重复峰值反向电压: | 600 V | 子类别: | Rectifier Diodes |
表面贴装: | NO | 技术: | SCHOTTKY |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
APT50-101DN | ETC |
获取价格 |
TRANSISTOR | MOSFET | N-CHANNEL | 500V V(BR)DSS | 22.5A I(D) | CHIP | |
APT5010B2 | ADPOW |
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Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode po | |
APT5010B2FLC | ADPOW |
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暂无描述 | |
APT5010B2FLL | ADPOW |
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Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode po | |
APT5010B2FLL_04 | ADPOW |
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POWER MOS 7 FREDFET | |
APT5010B2FLLG | MICROSEMI |
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Power Field-Effect Transistor, 46A I(D), 500V, 0.1ohm, 1-Element, N-Channel, Silicon, Meta | |
APT5010B2LC | ADPOW |
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Power MOS VI is a new generation of low gate charge, high voltage N-Channel enhancement mo | |
APT5010B2LL | ADPOW |
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Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode po | |
APT5010B2LL | MICROSEMI |
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Power MOS 7 is a new generation of low loss, high voltage, N-Channel | |
APT5010B2LL_04 | ADPOW |
获取价格 |
POWER MOS 7 MOSFET |