是否Rohs认证: | 不符合 | 生命周期: | Transferred |
包装说明: | IN-LINE, R-PSIP-T3 | Reach Compliance Code: | unknown |
风险等级: | 5.69 | Is Samacsys: | N |
雪崩能效等级(Eas): | 1600 mJ | 外壳连接: | DRAIN |
配置: | SINGLE WITH BUILT-IN DIODE | 最小漏源击穿电压: | 500 V |
最大漏极电流 (Abs) (ID): | 46 A | 最大漏极电流 (ID): | 46 A |
最大漏源导通电阻: | 0.1 Ω | FET 技术: | METAL-OXIDE SEMICONDUCTOR |
JESD-30 代码: | R-PSIP-T3 | JESD-609代码: | e0 |
元件数量: | 1 | 端子数量: | 3 |
工作模式: | ENHANCEMENT MODE | 最高工作温度: | 150 °C |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | IN-LINE | 峰值回流温度(摄氏度): | NOT SPECIFIED |
极性/信道类型: | N-CHANNEL | 最大功率耗散 (Abs): | 500 W |
最大脉冲漏极电流 (IDM): | 184 A | 认证状态: | Not Qualified |
子类别: | FET General Purpose Power | 表面贴装: | NO |
端子面层: | Tin/Lead (Sn/Pb) | 端子形式: | THROUGH-HOLE |
端子位置: | SINGLE | 处于峰值回流温度下的最长时间: | NOT SPECIFIED |
晶体管应用: | SWITCHING | 晶体管元件材料: | SILICON |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
APT5010B2FLL_04 | ADPOW |
获取价格 |
POWER MOS 7 FREDFET |
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APT5010B2FLLG | MICROSEMI |
获取价格 |
Power Field-Effect Transistor, 46A I(D), 500V, 0.1ohm, 1-Element, N-Channel, Silicon, Meta |
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APT5010B2LC | ADPOW |
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Power MOS VI is a new generation of low gate charge, high voltage N-Channel enhancement mo |
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APT5010B2LL | ADPOW |
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Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode po |
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APT5010B2LL | MICROSEMI |
获取价格 |
Power MOS 7 is a new generation of low loss, high voltage, N-Channel |
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APT5010B2LL_04 | ADPOW |
获取价格 |
POWER MOS 7 MOSFET |
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APT5010B2LLG | MICROSEMI |
获取价格 |
Power Field-Effect Transistor, 46A I(D), 500V, 0.1ohm, 1-Element, N-Channel, Silicon, Meta |
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APT5010B2VFR | ADPOW |
获取价格 |
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. |
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APT5010B2VFRG | MICROSEMI |
获取价格 |
Power Field-Effect Transistor, 47A I(D), 500V, 0.1ohm, 1-Element, N-Channel, Silicon, Meta |
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APT5010B2VR | ADPOW |
获取价格 |
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. |
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