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APT47GA60JD40 PDF预览

APT47GA60JD40

更新时间: 2024-11-25 06:37:27
品牌 Logo 应用领域
美高森美 - MICROSEMI 双极性晶体管
页数 文件大小 规格书
9页 248K
描述
High Speed PT IGBT

APT47GA60JD40 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Active零件包装代码:SOT-227
包装说明:FLANGE MOUNT, R-PUFM-X4针数:4
Reach Compliance Code:compliant风险等级:5.72
其他特性:LOW CONDUCTION LOSS, UL RECOGNIZED外壳连接:ISOLATED
最大集电极电流 (IC):87 A集电极-发射极最大电压:600 V
配置:SINGLE WITH BUILT-IN DIODEJEDEC-95代码:SOT-227
JESD-30 代码:R-PUFM-X4元件数量:1
端子数量:4最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:FLANGE MOUNT峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:N-CHANNEL认证状态:Not Qualified
表面贴装:NO端子形式:UNSPECIFIED
端子位置:UPPER处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:POWER CONTROL晶体管元件材料:SILICON
标称断开时间 (toff):299 ns标称接通时间 (ton):51 ns
Base Number Matches:1

APT47GA60JD40 数据手册

 浏览型号APT47GA60JD40的Datasheet PDF文件第2页浏览型号APT47GA60JD40的Datasheet PDF文件第3页浏览型号APT47GA60JD40的Datasheet PDF文件第4页浏览型号APT47GA60JD40的Datasheet PDF文件第5页浏览型号APT47GA60JD40的Datasheet PDF文件第6页浏览型号APT47GA60JD40的Datasheet PDF文件第7页 
APT47GA60JD40  
600V  
High Speed PT IGBT  
POWER MOS 8® is a high speed Punch-Through switch-mode IGBT. Low Eoff is achieved  
E
E
7
2
-2  
C
G
through leading technology silicon design and lifetime control processes. A reduced Eoff  
-
T
O
S
VCE(ON) tradeoff results in superior efciency compared to other IGBT technologies. Low  
gate charge and a greatly reduced ratio of Cres/Cies provide excellent noise immunity, short  
delay times and simple gate drive. The intrinsic chip gate resistance and capacitance of the  
poly-silicone gate structure help control di/dt during switching, resulting in low EMI, even  
when switching at high frequency.  
"UL Recognized"  
file # E145592  
ISOTOP®  
APT47GA60JD40  
Combi (IGBT and Diode)  
FEATURES  
TYPICAL APPLICATIONS  
• Fast switching with low EMI  
• Very Low Eoff for maximum efciency  
• Ultra low Cres for improved noise immunity  
• Low conduction loss  
• ZVS phase shifted and other full bridge  
• Half bridge  
• High power PFC boost  
• Welding  
• Low gate charge  
• UPS, solar, and other inverters  
• High frequency, high efciency industrial  
• Increased intrinsic gate resistance for low EMI  
• RoHS compliant  
Absolute Maximum Ratings  
Symbol Parameter  
Ratings  
Unit  
Collector Emitter Voltage  
600  
V
Vces  
IC1  
Continuous Collector Current @ TC = 25°C  
Continuous Collector Current @ TC = 100°C  
Pulsed Collector Current 1  
87  
47  
A
IC2  
ICM  
139  
VGE  
Gate-Emitter Voltage 2  
±30  
V
PD  
Total Power Dissipation @ TC = 25°C  
Switching Safe Operating Area @ TJ = 150°C  
Operating and Storage Junction Temperature Range  
283  
W
SSOA  
TJ, TSTG  
TL  
139A @ 600V  
-55 to 150  
°C  
Lead Temperature for Soldering: 0.063" from Case for 10 Seconds  
300  
Static Characteristics  
Symbol Parameter  
T = 25°C unless otherwise specied  
J
Test Conditions  
Min  
Typ  
Max  
Unit  
VBR(CES)  
Collector-Emitter Breakdown Voltage  
VGE = 0V, IC = 1.0mA  
600  
TJ = 25°C  
TJ = 125°C  
2.0  
1.9  
4.5  
2.5  
VGE = 15V,  
IC = 47A  
V
VCE(on)  
VGE(th)  
ICES  
Collector-Emitter On Voltage  
Gate Emitter Threshold Voltage  
Zero Gate Voltage Collector Current  
Gate-Emitter Leakage Current  
VGE =VCE , IC = 1mA  
3
6
TJ = 25°C  
275  
VCE = 600V,  
VGE = 0V  
μA  
TJ = 125°C  
3000  
±100  
IGES  
VGS = ±30V  
nA  
Microsemi Website - http://www.microsemi.com  

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