APT47N65BC3G

更新时间： 2024-11-25 12:53:55

品牌	Logo	应用领域
美高森美 - MICROSEMI		/
页数	文件大小	规格书
5页	173K
描述
Increased Power Dissipation

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中文翻译

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数据手册

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APT47N65BC3G 数据手册

APT47N65BC3

650V 47A 0.070Ω

Super Junction MOSFET

D³

• Ultra low R_{DS ON}

(

)

• Increased Power Dissipation

• Low Miller Capacitance

• Ultra Low Gate Charge, Q_g

• Avalanche Energy Rated

• TO-247 or Surface Mount D³PAK Package

MAXIMUM RATINGS

Symbol Parameter

All Ratings: T = 25°C unless otherwise speciﬁed.

APT47N65BC3

UNIT

V_DSS

I_D

Drain-Source Voltage

Volts

650

Continuous Drain Current @ T_C= 25°C

Amps

Volts

I_DM

141

Pulsed Drain Current

V_GS

V_GSM

Gate-Source Voltage Continuous

Gate-Source Voltage Transient

±20

±30

Watts

W/°C

Total Power Dissipation @ T_C= 25°C

Linear Derating Factor

417

P_D

3.33

-55 to 150

260

T_J,T_STGOperating and Storage Junction Temperature Range

°C

T_L

Lead Temperature: 0.063" from Case for 10 Sec.

V/ns

Drain-Source Voltage slope (V_DS= 480V, I_D= 47A, T_J= 125°C)

Amps

I_AR

E_AR

E_AS

Repetitive Avalanche Current

Repetitive Avalanche Energy

Single Pulse Avalanche Energy

1800

STATIC ELECTRICAL CHARACTERISTICS

Symbol Characteristic / Test Conditions

UNIT

MIN

TYP

MAX

BV_DSS

R_DS(on)

Drain-Source Breakdown Voltage (V_GS= 0V, I_D= 250μA)

650

Volts

Drain-Source On-State Resistance

(V_GS= 10V, I_D= 30A)

Ohms

0.06

0.5

0.07

Zero Gate Voltage Drain Current (V_DS= 650V, V_GS= 0V)

Zero Gate Voltage Drain Current (V_DS= 650V, V_GS= 0V, T_J= 150°C)

Gate-Source Leakage Current (V_GS= ±20V, V_DS= 0V)

Gate Threshold Voltage (V_DS= V_GS, I_D= 2.7mA)

I_DSS

μA

250

±100

3.9

I_GSS

V_GS(th)

Volts

2.10

CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.

"COOLMOS™ comprise a new family of transistors developed by Inﬁneon Technologies AG. "COOLMOS" is a trade-

mark of Inﬁneon Technologies AG."

Microsemi Website - http://www.microsemi.com

12 3 4 5

中文翻译

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