APT47N60SCFG

更新时间： 2024-11-25 08:33:27

品牌	Logo	应用领域
ADPOW		晶体晶体管
页数	文件大小	规格书
5页	404K
描述
Super Junction FREDFET

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中文翻译

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技术参数
数据手册

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APT47N60SCFG 技术参数

生命周期：	Transferred	Reach Compliance Code：	unknown
风险等级：	5.59	Is Samacsys：	N
Base Number Matches：	1

APT47N60SCFG 数据手册

600V 46A 0.083Ω

APT47N60BCF

APT47N60SCF

APT47N60BCFG* APT47N60SCFG*

*G Denotes RoHS Compliant, Pb Free Terminal Finish.

Super Junction FREDFET

(B)

COOLMOS

Power Semiconductors

D³PAK

• Ultra Low R_DS(ON)

• Intrinsic Fast-Recovery Body Diode

• Extreme Low Reverse Recovery Charge

• Ideal For ZVS Applications

(S)

• Low Miller Capacitance

• Ultra Low Gate Charge, Q

• Avalanche Energy Rated

• Popular TO-247 or Surface Mount D³Package

• Extreme

Rated

MAXIMUM RATINGS

All Ratings: T = 25°C unless otherwise speciﬁed.

Symbol Parameter

APT47N60B_SCF(G)

UNIT

V_DSS

Volts

Drain-Source Voltage

600

Continuous Drain Current @ T_C= 25°C

I_D

Continuous Drain Current @ T_C= 100°C

Amps

I_DM

Pulsed Drain Current

115

V_GS

Volts

Watts

W/°C

Gate-Source Voltage Continuous

±30

417

Total Power Dissipation @ T_C= 25°C

P_D

Linear Derating Factor

1.67

T_J,T_STG

T_L

Operating and Storage Junction Temperature Range

Lead Temperature: 0.063" from Case for 10 Sec.

Drain-Source Voltage slope (V_DS= 480V, I_D= 46A, T_J= 125°C)

-55 to 150

260

°C

V/ns

I_AR

E_AR

E_AS

Avalanche Current

Amps

Repetitive Avalanche Energy

1800

Single Pulse Avalanche Energy

STATIC ELECTRICAL CHARACTERISTICS

Symbol Characteristic / Test Conditions

MIN

TYP

MAX

UNIT

B_(VR)DS

R_DS(on)

Drain-Source Breakdown Voltage (V_GS= 0V, I_D= 250µA)

Volts

600

Drain-Source On-State Resistance

(V_GS= 10V, I_D= 29A)

0.083 Ohms

Zero Gate Voltage Drain Current (V_DS= 600V, V_GS= 0V)

Zero Gate Voltage Drain Current (V_DS= 600V, V_GS= 0V, T_C= 150°C)

Gate-Source Leakage Current (V_GS= ±20V, V_DS= 0V)

Gate Threshold Voltage (V_DS= V_GS, I_D= 2.9mA)

I_DSS

µA

5000

I_GSS

±100

V_GS(th)

Volts

CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.

APT Website - http://www.advancedpower.com

"COOLMOS™ comprise a new family of transistors developed by Inﬁneon Technologies AG. "COOLMOS" is a trade-

mark of Inﬁneon Technologies AG."

12 3 4 5

中文翻译

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