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APT32M80J PDF预览

APT32M80J

更新时间: 2024-01-20 13:59:03
品牌 Logo 应用领域
美高森美 - MICROSEMI /
页数 文件大小 规格书
4页 181K
描述
N-Channel MOSFET

APT32M80J 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Active零件包装代码:ISOTOP
包装说明:FLANGE MOUNT, R-PUFM-X4针数:4
Reach Compliance Code:compliant风险等级:5.34
其他特性:AVALANCHE RATED, HIGH RELIABILITY, UL RECOGNIZED雪崩能效等级(Eas):1979 mJ
外壳连接:ISOLATED配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:800 V最大漏极电流 (ID):33 A
最大漏源导通电阻:0.19 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JESD-30 代码:R-PUFM-X4元件数量:1
端子数量:4工作模式:ENHANCEMENT MODE
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:N-CHANNEL
最大脉冲漏极电流 (IDM):173 A认证状态:Not Qualified
表面贴装:NO端子形式:UNSPECIFIED
端子位置:UPPER处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

APT32M80J 数据手册

 浏览型号APT32M80J的Datasheet PDF文件第2页浏览型号APT32M80J的Datasheet PDF文件第3页浏览型号APT32M80J的Datasheet PDF文件第4页 
APT32M80J  
800V, 33A, 0.19Ω Max  
S
S
N-Channel MOSFET  
Power MOS 8is a high speed, high voltage N-channel switch-mode power MOSFET.  
A proprietary planar strip design yields excellent reliability and manufacturability. Low  
switching loss is achieved with low input capacitance and ultra low Crss "Miller" capaci-  
tance. The intrinsic gate resistance and capacitance of the poly-silicon gate structure  
help control slew rates during switching, resulting in low EMI and reliable paralleling,  
even when switching at very high frequency. Reliability in yback, boost, forward, and  
other circuits is enhanced by the high avalanche energy capability.  
7
2
D
-2  
G
T
O
S
"UL Recognized"  
file # E145592  
ISOTOP®  
D
S
APT32M80J  
G
Single die MOSFET  
FEATURES  
TYPICAL APPLICATIONS  
• PFC and other boost converter  
• Fast switching with low EMI/RFI  
• Buck converter  
• Low RDS(on)  
• Two switch forward (asymmetrical bridge)  
• Single switch forward  
• Flyback  
• Ultra low Crss for improved noise immunity  
• Low gate charge  
• Avalanche energy rated  
• RoHS compliant  
• Inverters  
Absolute Maximum Ratings  
Symbol Parameter  
Unit  
Ratings  
33  
Continuous Drain Current @ TC = 25°C  
ID  
Continuous Drain Current @ TC = 100°C  
20  
A
Pulsed Drain Current 1  
IDM  
VGS  
EAS  
IAR  
173  
±30  
1979  
24  
V
mJ  
A
Gate-Source Voltage  
Single Pulse Avalanche Energy 2  
Avalanche Current, Repetitive or Non-Repetitive  
Thermal and Mechanical Characteristics  
Symbol Characteristic  
Min  
Typ  
Max  
543  
Unit  
PD  
Total Power Dissipation @ TC = 25°C  
W
RθJC  
Junction to Case Thermal Resistance  
0.23  
°C/W  
RθCS  
Case to Sink Thermal Resistance, Flat, Greased Surface  
Operating and Storage Junction Temperature Range  
RMS Voltage (50-60hHz Sinusoidal Wavefomr from Terminals to Mounting Base for 1 Min.)  
0.15  
TJ,TSTG  
VIsolation  
°C  
V
-55  
150  
2500  
oz  
g
1.03  
29.2  
WT  
Package Weight  
in·lbf  
N·m  
10  
Torque  
Terminals and Mounting Screws.  
Microsemi Website - http://www.microsemi.com  
1.1  

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