APT34F100B2
APT34F100L
1000V, 34A, 0.40Ω Max, t ≤300ns
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N-Channel FREDFET
Power MOS 8™ is a high speed, high voltage N-channel switch-mode power MOSFET.
T-Max®
TO-264
This 'FREDFET' version has a drain-source (body) diode that has been optimized for
high reliability in ZVS phase shifted bridge and other circuits through reduced t , soft
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recovery, and high recovery dv/dt capability. Low gate charge, high gain, and a greatly
reduced ratio of C /C result in excellent noise immunity and low switching loss. The
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APT34F100B2
APT34F100L
intrinsic gate resistance and capacitance of the poly-silicon gate structure help control
di/dt during switching, resulting in low EMI and reliable paralleling, even when switching
at very high frequency.
D
S
Single die FREDFET
G
FEATURES
TYPICAL APPLICATIONS
• ZVS phase shifted and other full bridge
• Fast switching with low EMI
• Half bridge
• Low t for high reliability
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• PFC and other boost converter
• Buck converter
• Ultra low C
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for improved noise immunity
• Low gate charge
• Single and two switch forward
• Flyback
• Avalanche energy rated
• RoHS compliant
Absolute Maximum Ratings
Symbol Parameter
Unit
Ratings
34
Continuous Drain Current @ TC = 25°C
ID
Continuous Drain Current @ TC = 100°C
21
A
Pulsed Drain Current 1
IDM
VGS
EAS
IAR
140
±30
2165
18
V
mJ
A
Gate-Source Voltage
Single Pulse Avalanche Energy 2
Avalanche Current, Repetitive or Non-Repetitive
Thermal and Mechanical Characteristics
Symbol Characteristic
Min
Typ
Max
1135
0.11
Unit
PD
Total Power Dissipation @ TC = 25°C
W
RθJC
Junction to Case Thermal Resistance
°C/W
°C
RθCS
0.11
Case to Sink Thermal Resistance, Flat, Greased Surface
TJ,TSTG
-55
150
300
Operating and Storage Junction Temperature Range
TL
Soldering Temperature for 10 Seconds (1.6mm from case)
oz
g
0.22
6.2
WT
Package Weight
in·lbf
N·m
10
Torque
Mounting Torque ( TO-264 Package), 4-40 or M3 screw
1.1
Microsemi Website - http://www.microsemi.com