APT34F60B
APT34F60S
600V, 36A, 0.19Ω Max t ≤250ns
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N-Channel FREDFET
Power MOS 8™ is a high speed, high voltage N-channel switch-mode power MOSFET.
D3PAK
This 'FREDFET' version has a drain-source (body) diode that has been optimized for
high reliability in ZVS phase shifted bridge and other circuits through reduced t , soft
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recovery, and high recovery dv/dt capability. Low gate charge, high gain, and a greatly
reduced ratio of C /C result in excellent noise immunity and low switching loss. The
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APT34F60B
APT34F60S
intrinsic gate resistance and capacitance of the poly-silicon gate structure help control
di/dt during switching, resulting in low EMI and reliable paralleling, even when switching
at very high frequency.
D
S
Single die FREDFET
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FEATURES
TYPICAL APPLICATIONS
• ZVS phase shifted and other full bridge
• Fast switching with low EMI
• Half bridge
• Low t for high reliability
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• PFC and other boost converter
• Buck converter
• Ultra low C
for improved noise immunity
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• Low gate charge
• Single and two switch forward
• Flyback
• Avalanche energy rated
• RoHS compliant
Absolute Maximum Ratings
Symbol Parameter
Unit
Ratings
36
Continuous Drain Current @ TC = 25°C
ID
Continuous Drain Current @ TC = 1ꢀꢀ°C
23
A
Pulsed Drain Current 1
IDM
VGS
EAS
IAR
124
3ꢀ
V
mJ
A
Gate-Source Voltage
Single Pulse Avalanche Energy 2
Avalanche Current, Repetitive or Non-Repetitive
93ꢀ
17
Thermal and Mechanical Characteristics
Symbol Characteristic
Min
Typ
Max
624
Unit
PD
Total Power Dissipation @ TC = 25°C
W
RθJC
ꢀ.2ꢀ
Junction to Case Thermal Resistance
°C/W
°C
RθCS
ꢀ.15
Case to Sink Thermal Resistance, Flat, Greased Surface
TJ,TSTG
-55
15ꢀ
3ꢀꢀ
Operating and Storage Junction Temperature Range
TL
Soldering Temperature for 1ꢀ Seconds (1.6mm from case)
oz
g
ꢀ.22
6.2
WT
Package Weight
in·lbf
N·m
1ꢀ
Torque
Mounting Torque ( TO-247 Package), 6-32 or M3 screw
1.1
MicrosemiWebsite-http://www.microsemi.com