5秒后页面跳转
APT34F60B_09 PDF预览

APT34F60B_09

更新时间: 2024-10-28 12:20:19
品牌 Logo 应用领域
美高森美 - MICROSEMI /
页数 文件大小 规格书
4页 134K
描述
N-Channel FREDFET

APT34F60B_09 数据手册

 浏览型号APT34F60B_09的Datasheet PDF文件第2页浏览型号APT34F60B_09的Datasheet PDF文件第3页浏览型号APT34F60B_09的Datasheet PDF文件第4页 
APT34F60B  
APT34F60S  
600V, 36A, 0.19Ω Max t 250ns  
rr  
N-Channel FREDFET  
Power MOS 8is a high speed, high voltage N-channel switch-mode power MOSFET.  
D3PAK  
This 'FREDFET' version has a drain-source (body) diode that has been optimized for  
high reliability in ZVS phase shifted bridge and other circuits through reduced t , soft  
rr  
recovery, and high recovery dv/dt capability. Low gate charge, high gain, and a greatly  
reduced ratio of C /C result in excellent noise immunity and low switching loss. The  
rss iss  
APT34F60B  
APT34F60S  
intrinsic gate resistance and capacitance of the poly-silicon gate structure help control  
di/dt during switching, resulting in low EMI and reliable paralleling, even when switching  
at very high frequency.  
D
S
Single die FREDFET  
G
FEATURES  
TYPICAL APPLICATIONS  
• ZVS phase shifted and other full bridge  
• Fast switching with low EMI  
• Half bridge  
• Low t for high reliability  
rr  
• PFC and other boost converter  
• Buck converter  
• Ultra low C  
for improved noise immunity  
rss  
• Low gate charge  
• Single and two switch forward  
• Flyback  
• Avalanche energy rated  
• RoHS compliant  
Absolute Maximum Ratings  
Symbol Parameter  
Unit  
Ratings  
36  
Continuous Drain Current @ TC = 25°C  
ID  
Continuous Drain Current @ TC = 1ꢀꢀ°C  
23  
A
Pulsed Drain Current 1  
IDM  
VGS  
EAS  
IAR  
124  
3ꢀ  
V
mJ  
A
Gate-Source Voltage  
Single Pulse Avalanche Energy 2  
Avalanche Current, Repetitive or Non-Repetitive  
93ꢀ  
17  
Thermal and Mechanical Characteristics  
Symbol Characteristic  
Min  
Typ  
Max  
624  
Unit  
PD  
Total Power Dissipation @ TC = 25°C  
W
RθJC  
ꢀ.2ꢀ  
Junction to Case Thermal Resistance  
°C/W  
°C  
RθCS  
ꢀ.15  
Case to Sink Thermal Resistance, Flat, Greased Surface  
TJ,TSTG  
-55  
15ꢀ  
3ꢀꢀ  
Operating and Storage Junction Temperature Range  
TL  
Soldering Temperature for 1ꢀ Seconds (1.6mm from case)  
oz  
g
ꢀ.22  
6.2  
WT  
Package Weight  
in·lbf  
N·m  
1ꢀ  
Torque  
Mounting Torque ( TO-247 Package), 6-32 or M3 screw  
1.1  
MicrosemiWebsite-http://www.microsemi.com  

与APT34F60B_09相关器件

型号 品牌 获取价格 描述 数据表
APT34F60S MICROSEMI

获取价格

N-Channel FREDFET
APT34M120J MICROSEMI

获取价格

N-Channel MOSFET
APT34M120J-09 MICROSEMI

获取价格

N-Channel MOSFET
APT34M60B MICROSEMI

获取价格

N-Channel MOSFET
APT34M60B_09 MICROSEMI

获取价格

N-Channel MOSFET
APT34M60S MICROSEMI

获取价格

N-Channel MOSFET
APT34N80B2C3 ADPOW

获取价格

Super Junction MOSFET
APT34N80B2C3 MICROSEMI

获取价格

Super Junction MOSFET
APT34N80B2C3G MICROSEMI

获取价格

Power Field-Effect Transistor, 34A I(D), 800V, 0.145ohm, 1-Element, N-Channel, Silicon, Me
APT34N80LC3 ADPOW

获取价格

Super Junction MOSFET