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APT34N80B2C3G PDF预览

APT34N80B2C3G

更新时间: 2024-11-24 13:05:39
品牌 Logo 应用领域
美高森美 - MICROSEMI /
页数 文件大小 规格书
5页 256K
描述
Power Field-Effect Transistor, 34A I(D), 800V, 0.145ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TMAX, 3 PIN

APT34N80B2C3G 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Active包装说明:IN-LINE, R-PSIP-T3
针数:3Reach Compliance Code:compliant
ECCN代码:EAR99风险等级:1.43
其他特性:AVALANCHE RATED雪崩能效等级(Eas):670 mJ
外壳连接:DRAIN配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:800 V最大漏极电流 (ID):34 A
最大漏源导通电阻:0.145 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JESD-30 代码:R-PSIP-T3JESD-609代码:e1
元件数量:1端子数量:3
工作模式:ENHANCEMENT MODE最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:IN-LINE峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:N-CHANNEL最大脉冲漏极电流 (IDM):102 A
认证状态:Not Qualified表面贴装:NO
端子面层:TIN SILVER COPPER端子形式:THROUGH-HOLE
端子位置:SINGLE处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

APT34N80B2C3G 数据手册

 浏览型号APT34N80B2C3G的Datasheet PDF文件第2页浏览型号APT34N80B2C3G的Datasheet PDF文件第3页浏览型号APT34N80B2C3G的Datasheet PDF文件第4页浏览型号APT34N80B2C3G的Datasheet PDF文件第5页 
APT34N80B2C3  
APT34N80LC3  
800V 34A 0.145Ω  
Super Junction MOSFET  
T-MAX™  
TO-264  
COOLMOS  
Power Semiconductors  
• Ultra low RDS ON  
(
)
• Low Miller Capacitance  
D
S
• Ultra Low Gate Charge, Qg  
• Avalanche Energy Rated  
• Popular T-MAX™ or TO-264 Package  
G
Unless stated otherwise, Microsemi discrete MOSFETs contain a single MOSFET die. This device is made with  
two parallel MOSFET die. It is intended for switch-mode operation. It is not suitable for linear mode operation.  
MAXIMUM RATINGS  
Symbol Parameter  
All Ratings: T = 25°C unless otherwise specified.  
C
APT34N80B2C3_LC3  
UNIT  
VDSS  
ID  
Drain-Source Voltage  
800  
34  
Volts  
Continuous Drain Current @ TC = 25°C  
Amps  
Volts  
1
IDM  
Pulsed Drain Current  
102  
VGS  
VGSM  
Gate-Source Voltage Continuous  
Gate-Source Voltage Transient  
Total Power Dissipation @ TC = 25°C  
Linear Derating Factor  
±20  
±30  
417  
Watts  
W/°C  
PD  
3.33  
-55 to 150  
300  
TJ,TSTG  
TL  
Operating and Storage Junction Temperature Range  
°C  
Lead Temperature: 0.063" from Case for 10 Sec.  
dv  
/
Drain-Source Voltage slope (VDS = 640V, ID = 34A, TJ = 125°C)  
V/ns  
50  
dt  
7
IAR  
EAR  
EAS  
Amps  
17  
Repetitive Avalanche Current  
7
Repetitive Avalanche Energy  
0.5  
mJ  
4
Single Pulse Avalanche Energy  
670  
STATICELECTRICALCHARACTERISTICS  
Symbol Characteristic / Test Conditions  
MIN  
TYP  
MAX  
UNIT  
Volts  
Ohms  
BVDSS  
RDS(on)  
Drain-Source Breakdown Voltage (VGS = 0V, ID = 500µA)  
800  
2
Drain-Source On-State Resistance  
(VGS = 10V, ID = 22A)  
0.125 0.145  
Zero Gate Voltage Drain Current (VDS = 800V, VGS = 0V)  
Zero Gate Voltage Drain Current (VDS = 800V, VGS = 0V, TJ = 150°C)  
Gate-Source Leakage Current (VGS = ±20V, VDS = 0V)  
Gate Threshold Voltage (VDS = VGS, ID = 2mA)  
1.0  
50  
500  
±200  
3.9  
IDSS  
µA  
IGSS  
nA  
VGS(th)  
Volts  
2.10  
3
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.  
Microsemi Website - http://www.microsemi.com  
"COOLMOS comprise a new family of transistors developed by Infineon Technologies AG. "COOLMOS" is a trade-  
mark of Infineon Technologies AG"  

APT34N80B2C3G 替代型号

型号 品牌 替代类型 描述 数据表
APT34N80B2C3 MICROSEMI

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Super Junction MOSFET

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