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APT34N80LC3 PDF预览

APT34N80LC3

更新时间: 2024-11-24 04:32:47
品牌 Logo 应用领域
美高森美 - MICROSEMI 晶体晶体管功率场效应晶体管开关脉冲局域网
页数 文件大小 规格书
5页 256K
描述
Super Junction MOSFET

APT34N80LC3 技术参数

是否无铅:含铅是否Rohs认证:不符合
生命周期:Active零件包装代码:TO-264AA
包装说明:FLANGE MOUNT, R-PSFM-T3针数:3
Reach Compliance Code:compliant风险等级:5.16
Is Samacsys:N其他特性:AVALANCHE RATED
雪崩能效等级(Eas):670 mJ外壳连接:DRAIN
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:800 V
最大漏极电流 (ID):34 A最大漏源导通电阻:0.145 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJEDEC-95代码:TO-264AA
JESD-30 代码:R-PSFM-T3元件数量:1
端子数量:3工作模式:ENHANCEMENT MODE
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:N-CHANNEL
最大脉冲漏极电流 (IDM):102 A认证状态:Not Qualified
表面贴装:NO端子形式:THROUGH-HOLE
端子位置:SINGLE处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

APT34N80LC3 数据手册

 浏览型号APT34N80LC3的Datasheet PDF文件第2页浏览型号APT34N80LC3的Datasheet PDF文件第3页浏览型号APT34N80LC3的Datasheet PDF文件第4页浏览型号APT34N80LC3的Datasheet PDF文件第5页 
APT34N80B2C3  
APT34N80LC3  
800V 34A 0.145Ω  
Super Junction MOSFET  
T-MAX™  
TO-264  
COOLMOS  
Power Semiconductors  
• Ultra low RDS ON  
(
)
• Low Miller Capacitance  
D
S
• Ultra Low Gate Charge, Qg  
• Avalanche Energy Rated  
• Popular T-MAX™ or TO-264 Package  
G
Unless stated otherwise, Microsemi discrete MOSFETs contain a single MOSFET die. This device is made with  
two parallel MOSFET die. It is intended for switch-mode operation. It is not suitable for linear mode operation.  
MAXIMUM RATINGS  
Symbol Parameter  
All Ratings: T = 25°C unless otherwise specified.  
C
APT34N80B2C3_LC3  
UNIT  
VDSS  
ID  
Drain-Source Voltage  
800  
34  
Volts  
Continuous Drain Current @ TC = 25°C  
Amps  
Volts  
1
IDM  
Pulsed Drain Current  
102  
VGS  
VGSM  
Gate-Source Voltage Continuous  
Gate-Source Voltage Transient  
Total Power Dissipation @ TC = 25°C  
Linear Derating Factor  
±20  
±30  
417  
Watts  
W/°C  
PD  
3.33  
-55 to 150  
300  
TJ,TSTG  
TL  
Operating and Storage Junction Temperature Range  
°C  
Lead Temperature: 0.063" from Case for 10 Sec.  
dv  
/
Drain-Source Voltage slope (VDS = 640V, ID = 34A, TJ = 125°C)  
V/ns  
50  
dt  
7
IAR  
EAR  
EAS  
Amps  
17  
Repetitive Avalanche Current  
7
Repetitive Avalanche Energy  
0.5  
mJ  
4
Single Pulse Avalanche Energy  
670  
STATICELECTRICALCHARACTERISTICS  
Symbol Characteristic / Test Conditions  
MIN  
TYP  
MAX  
UNIT  
Volts  
Ohms  
BVDSS  
RDS(on)  
Drain-Source Breakdown Voltage (VGS = 0V, ID = 500µA)  
800  
2
Drain-Source On-State Resistance  
(VGS = 10V, ID = 22A)  
0.125 0.145  
Zero Gate Voltage Drain Current (VDS = 800V, VGS = 0V)  
Zero Gate Voltage Drain Current (VDS = 800V, VGS = 0V, TJ = 150°C)  
Gate-Source Leakage Current (VGS = ±20V, VDS = 0V)  
Gate Threshold Voltage (VDS = VGS, ID = 2mA)  
1.0  
50  
500  
±200  
3.9  
IDSS  
µA  
IGSS  
nA  
VGS(th)  
Volts  
2.10  
3
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.  
Microsemi Website - http://www.microsemi.com  
"COOLMOS comprise a new family of transistors developed by Infineon Technologies AG. "COOLMOS" is a trade-  
mark of Infineon Technologies AG"  

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