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APT34M120J-09 PDF预览

APT34M120J-09

更新时间: 2024-10-28 12:20:19
品牌 Logo 应用领域
美高森美 - MICROSEMI /
页数 文件大小 规格书
4页 135K
描述
N-Channel MOSFET

APT34M120J-09 数据手册

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APT34M120J  
1200V, 35A, 0.29Ω Max  
N-Channel MOSFET  
S
S
Power MOS 8is a high speed, high voltage N-channel switch-mode power MOSFET.  
A proprietary planar stripe design yields excellent reliability and manufacturability. Low  
switching loss is achieved with low input capacitance and ultra low Crss "Miller" capaci-  
tance. The intrinsic gate resistance and capacitance of the poly-silicon gate structure  
help control slew rates during switching, resulting in low EMI and reliable paralleling,  
even when switching at very high frequency. Reliability in flyback, boost, forward, and  
other circuits is enhanced by the high avalanche energy capability.  
7
2
D
-2  
G
T
O
S
"UL Recognized"  
file # E145592  
ISOTOP®  
D
S
APT34M120J  
Single die MOSFET  
G
FEATURES  
TYPICAL APPLICATIONS  
• PFC and other boost converter  
• Fast switching with low EMI/RFI  
• Buck converter  
• Low RDS(on)  
• Two switch forward (asymmetrical bridge)  
• Single switch forward  
• Flyback  
• Ultra low Crss for improved noise immunity  
• Low gate charge  
• Avalanche energy rated  
• RoHS compliant  
• Inverters  
Absolute Maximum Ratings  
Symbol Parameter  
Unit  
Ratings  
35  
Continuous Drain Current @ TC = 25°C  
ID  
Continuous Drain Current @ TC = 1ꢀꢀ°C  
22  
A
Pulsed Drain Current 1  
IDM  
VGS  
EAS  
IAR  
195  
3ꢀ  
V
mJ  
A
Gate-Source Voltage  
Single Pulse Avalanche Energy 2  
Avalanche Current, Repetitive or Non-Repetitive  
27ꢀꢀ  
25  
Thermal and Mechanical Characteristics  
Symbol Characteristic  
Min  
Typ  
Max  
96ꢀ  
Unit  
PD  
Total Power Dissipation @ TC = 25°C  
W
RθJC  
Junction to Case Thermal Resistance  
ꢀ.13  
°C/W  
RθCS  
Case to Sink Thermal Resistance, Flat, Greased Surface  
Operating and Storage Junction Temperature Range  
RMS Voltage (5ꢀ-6ꢀhHz Sinusoidal Waveform from Terminals to Mounting Base for 1 Min.)  
ꢀ.11  
TJ,TSTG  
VIsolation  
°C  
V
-55  
15ꢀ  
25ꢀꢀ  
oz  
g
1.ꢀ3  
29.2  
WT  
Package Weight  
in·lbf  
N·m  
1ꢀ  
Torque  
Terminals and Mounting Screws.  
1.1  
MicrosemiWebsite-http://www.microsemi.com  

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TRANSISTOR | MOSFET | N-CHANNEL | 350V V(BR)DSS | 60A I(D) | CHIP