APT34M120J
1200V, 35A, 0.29Ω Max
N-Channel MOSFET
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Power MOS 8™ is a high speed, high voltage N-channel switch-mode power MOSFET.
A proprietary planar stripe design yields excellent reliability and manufacturability. Low
switching loss is achieved with low input capacitance and ultra low Crss "Miller" capaci-
tance. The intrinsic gate resistance and capacitance of the poly-silicon gate structure
help control slew rates during switching, resulting in low EMI and reliable paralleling,
even when switching at very high frequency. Reliability in flyback, boost, forward, and
other circuits is enhanced by the high avalanche energy capability.
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2
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-2
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"UL Recognized"
file # E145592
ISOTOP®
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APT34M120J
Single die MOSFET
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FEATURES
TYPICAL APPLICATIONS
• PFC and other boost converter
• Fast switching with low EMI/RFI
• Buck converter
• Low RDS(on)
• Two switch forward (asymmetrical bridge)
• Single switch forward
• Flyback
• Ultra low Crss for improved noise immunity
• Low gate charge
• Avalanche energy rated
• RoHS compliant
• Inverters
Absolute Maximum Ratings
Symbol Parameter
Unit
Ratings
35
Continuous Drain Current @ TC = 25°C
ID
Continuous Drain Current @ TC = 1ꢀꢀ°C
22
A
Pulsed Drain Current 1
IDM
VGS
EAS
IAR
195
3ꢀ
V
mJ
A
Gate-Source Voltage
Single Pulse Avalanche Energy 2
Avalanche Current, Repetitive or Non-Repetitive
27ꢀꢀ
25
Thermal and Mechanical Characteristics
Symbol Characteristic
Min
Typ
Max
96ꢀ
Unit
PD
Total Power Dissipation @ TC = 25°C
W
RθJC
Junction to Case Thermal Resistance
ꢀ.13
°C/W
RθCS
Case to Sink Thermal Resistance, Flat, Greased Surface
Operating and Storage Junction Temperature Range
RMS Voltage (5ꢀ-6ꢀhHz Sinusoidal Waveform from Terminals to Mounting Base for 1 Min.)
ꢀ.11
TJ,TSTG
VIsolation
°C
V
-55
15ꢀ
25ꢀꢀ
oz
g
1.ꢀ3
29.2
WT
Package Weight
in·lbf
N·m
1ꢀ
Torque
Terminals and Mounting Screws.
1.1
MicrosemiWebsite-http://www.microsemi.com