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APT33GF120B2RDQ2 PDF预览

APT33GF120B2RDQ2

更新时间: 2024-10-28 03:37:27
品牌 Logo 应用领域
ADPOW 晶体晶体管功率控制双极性晶体管
页数 文件大小 规格书
9页 457K
描述
FAST IGBT & FRED

APT33GF120B2RDQ2 技术参数

生命周期:Transferred包装说明:IN-LINE, R-PSIP-T3
Reach Compliance Code:unknown风险等级:5.6
Is Samacsys:N外壳连接:COLLECTOR
最大集电极电流 (IC):64 A集电极-发射极最大电压:1200 V
配置:SINGLE WITH BUILT-IN DIODEJESD-30 代码:R-PSIP-T3
元件数量:1端子数量:3
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:IN-LINE极性/信道类型:N-CHANNEL
认证状态:Not Qualified表面贴装:NO
端子形式:THROUGH-HOLE端子位置:SINGLE
晶体管应用:POWER CONTROL晶体管元件材料:SILICON
标称断开时间 (toff):355 ns标称接通时间 (ton):31 ns
Base Number Matches:1

APT33GF120B2RDQ2 数据手册

 浏览型号APT33GF120B2RDQ2的Datasheet PDF文件第2页浏览型号APT33GF120B2RDQ2的Datasheet PDF文件第3页浏览型号APT33GF120B2RDQ2的Datasheet PDF文件第4页浏览型号APT33GF120B2RDQ2的Datasheet PDF文件第5页浏览型号APT33GF120B2RDQ2的Datasheet PDF文件第6页浏览型号APT33GF120B2RDQ2的Datasheet PDF文件第7页 
1200V
APT33GF120B2RDQ2 APT33GF120LRDQ2  
APT33GF120B2RDQ2G* APT33GF120LRDQ2G*  
*G Denotes RoHS Compliant, Pb Free Terminal Finish.  
®
(B2)  
FAST IGBT & FRED  
T-Max®  
TO-264  
The Fast IGBT is a new generation of high voltage power IGBTs. Using Non-Punch through  
technology, the Fast IGBT combined with an APT free wheeling Ultra Fast Recovery Epi-  
taxial Diode (FRED) offers superior ruggedness and fast switching speed.  
(L)  
• Low Forward Voltage Drop  
• RBSOA and SCSOA Rated  
• High Freq. Switching to 20KHz  
• Ultra Low Leakage Current  
C
E
• Ultrafast Soft Recovery Anti-parallel Diode  
G
MAXIMUM RATINGS  
All Ratings: T = 25°C unless otherwise specified.  
C
Parameter  
APT33GF120B2_LRDQ2(G)  
UNIT  
Symbol  
VCES  
Collector-Emitter Voltage  
1200  
Volts  
VGE  
IC1  
Gate-Emitter Voltage  
±30  
64  
Continuous Collector Current @ TC = 25°C  
Continuous Collector Current @ TC = 100°C  
IC2  
30  
Amps  
1
Pulsed Collector Current  
ICM  
75  
Switching Safe Operating Area @ TJ = 150°C  
75A @ 1200V  
357  
SSOA  
PD  
Total Power Dissipation  
Watts  
°C  
TJ,TSTG  
Operating and Storage Junction Temperature Range  
-55 to 150  
300  
TL  
Max. Lead Temp. for Soldering: 0.063" from Case for 10 Sec.  
STATIC ELECTRICAL CHARACTERISTICS  
Symbol Characteristic / Test Conditions  
MIN  
1200  
4.5  
TYP  
MAX  
Units  
V(BR)CES  
VGE(TH)  
Collector-Emitter Breakdown Voltage (VGE = 0V, IC = 1.5mA)  
Gate Threshold Voltage (VCE = VGE, IC = 1mA, Tj = 25°C)  
Collector-Emitter On Voltage (VGE = 15V, IC = 25A, Tj = 25°C)  
Collector-Emitter On Voltage (VGE = 15V, IC = 25A, Tj = 125°C)  
5.5  
2.5  
3.1  
6.5  
3.0  
Volts  
2.0  
VCE(ON)  
2
Collector Cut-off Current (VCE = 1200V, VGE = 0V, Tj = 25°C)  
100  
ICES  
IGES  
µA  
nA  
2
Collector Cut-off Current (VCE = 1200V, VGE = 0V, Tj = 125°C)  
Gate-Emitter Leakage Current (VGE = ±20V)  
6000  
±120  
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.  
APT Website - http://www.advancedpower.com  

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