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APT33N90JCCU3 PDF预览

APT33N90JCCU3

更新时间: 2024-11-24 06:37:27
品牌 Logo 应用领域
美高森美 - MICROSEMI 晶体二极管晶体管功率场效应晶体管开关脉冲局域网
页数 文件大小 规格书
5页 137K
描述
ISOTOP® Buck chopper Super Junction MOSFET SiC chopper diode

APT33N90JCCU3 技术参数

是否Rohs认证: 符合生命周期:Active
零件包装代码:ISOTOP包装说明:FLANGE MOUNT, R-PUFM-X4
针数:4Reach Compliance Code:compliant
ECCN代码:EAR99风险等级:5.7
Is Samacsys:N其他特性:AVALANCHE RATED, ULTRA-LOW RESISTANCE
雪崩能效等级(Eas):1940 mJ外壳连接:ISOLATED
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:900 V
最大漏极电流 (Abs) (ID):33 A最大漏极电流 (ID):33 A
最大漏源导通电阻:0.12 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JESD-30 代码:R-PUFM-X4元件数量:1
端子数量:4工作模式:ENHANCEMENT MODE
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
极性/信道类型:N-CHANNEL最大功率耗散 (Abs):290 W
最大脉冲漏极电流 (IDM):75 A认证状态:Not Qualified
子类别:FET General Purpose Power表面贴装:NO
端子形式:UNSPECIFIED端子位置:UPPER
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

APT33N90JCCU3 数据手册

 浏览型号APT33N90JCCU3的Datasheet PDF文件第2页浏览型号APT33N90JCCU3的Datasheet PDF文件第3页浏览型号APT33N90JCCU3的Datasheet PDF文件第4页浏览型号APT33N90JCCU3的Datasheet PDF文件第5页 
APT33N90JCCU3  
ISOTOP® Buck chopper  
Super Junction MOSFET  
SiC chopper diode  
VDSS = 900V  
R
DSon = 120mΩ max @ Tj = 25°C  
ID = 33A @ Tc = 25°C  
Application  
AC and DC motor control  
Switched Mode Power Supplies  
D
Features  
-
Ultra low RDSon  
G
-
-
-
Low Miller capacitance  
Ultra low gate charge  
Avalanche energy rated  
S
SiC Schottky Diode  
-
-
-
-
Zero reverse recovery  
Zero forward recovery  
Temperature Independent switching behavior  
Positive temperature coefficient on VF  
A
A
S
ISOTOP® Package (SOT-227)  
Very low stray inductance  
High level of integration  
D
G
Benefits  
Outstanding performance at high frequency operation  
Stable temperature behavior  
Very rugged  
Direct mounting to heatsink (isolated package)  
Low junction to case thermal resistance  
Easy paralleling due to positive TC of VCEsat  
RoHS Compliant  
ISOTOP®  
Absolute maximum ratings  
Symbol  
Parameter  
Max ratings  
Unit  
VDSS  
Drain - Source Breakdown Voltage  
900  
33  
25  
V
Tc = 25°C  
Tc = 80°C  
ID  
Continuous Drain Current  
A
IDM  
VGS  
RDSon  
Pulsed Drain current  
Gate - Source Voltage  
Drain - Source ON Resistance  
75  
±20  
120  
V
mΩ  
W
PD  
Maximum Power Dissipation  
Tc = 25°C  
290  
IAR  
EAR  
EAS  
Avalanche current (repetitive and non repetitive)  
Repetitive Avalanche Energy  
Single Pulse Avalanche Energy  
8.8  
2.9  
1940  
A
mJ  
These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note  
APT0502 on www.microsemi.com  
1 – 5  
www.microsemi.com  

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