Datasheet > AOS2182471

AOS2182471

更新时间： 2024-01-13 22:04:02

品牌	Logo	应用领域
科锐 - CREE		/
页数	文件大小	规格书
2页	482K
描述
CREE Silicon Carbide MOSFET Evaluation Kit

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AOS2182471 数据手册

CREE Silicon Carbide MOSFET Evaluation Kit

KIT8020CRD8FF1217P-1

Features:



Includes all the power stage parts needed to quickly

assemble a CREE MOSFET and diode based power

converter and get started with SiC devices.



Easy to use assembly to evaluate CREE MOSFET and

Diode performance in a half bridge circuit.

Easily configurable to different power conversion

topologies such as Buck or Boost configurations.

Easy access to critical test points for measurement

including V_GS, V_DSand I_DS.

Good layout example for properly driving MOSFET and

diode with minimal ringing.

Gate drive schematic and layout reference for a TO-247

packaged CREE MOSFET.

Some assembly Required

Comparative testing between CREE devices and IGBTs.

Description:

This Evaluation kit is meant to demonstrate the high performance of all CREE 1200V MOSFETs and CREE

Schottky diodes (SBD) in standard TO-247 package. The kit includes two Cree 80mOhm, 1200V CREE MOSFETs

and two 1200V 20A schottky diodes; a half bridge configured evaluation board that includes isolated gate drivers

and power supplies and all the other components needed to quickly assemble the half bridge power stage . The

basic block diagram and specifications are shown below. The assembly can be easily configured for several

topologies from the basic phase-leg configuration to several other common topologies as shown in the next

section. Additional topologies like H-bridge and 3-phase inverter are possible with two or more of the evaluation

kits.

Evaluation Board details



900V max.

10kW /w a cooling fan

> 300 kHz

+12V aux supply

2 input PWM channels

Subject to change without notice.

www.cree.com

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