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AOT10B60D PDF预览

AOT10B60D

更新时间: 2024-02-11 15:20:12
品牌 Logo 应用领域
美国万代 - AOS 二极管双极性晶体管
页数 文件大小 规格书
9页 646K
描述
600V, 10A Alpha IGBT with Diode

AOT10B60D 技术参数

是否Rohs认证: 符合生命周期:Not Recommended
包装说明:,Reach Compliance Code:compliant
风险等级:7.89最大集电极电流 (IC):20 A
集电极-发射极最大电压:600 V门极-发射极最大电压:20 V
最高工作温度:175 °C极性/信道类型:N-CHANNEL
最大功率耗散 (Abs):163 W子类别:Insulated Gate BIP Transistors
表面贴装:NOBase Number Matches:1

AOT10B60D 数据手册

 浏览型号AOT10B60D的Datasheet PDF文件第2页浏览型号AOT10B60D的Datasheet PDF文件第3页浏览型号AOT10B60D的Datasheet PDF文件第4页浏览型号AOT10B60D的Datasheet PDF文件第5页浏览型号AOT10B60D的Datasheet PDF文件第6页浏览型号AOT10B60D的Datasheet PDF文件第7页 
AOT10B60D  
600V, 10A Alpha IGBT TM with Diode  
General Description  
Product Summary  
The Alpha IGBTTM line of products offers best-in-class  
performance in conduction and switching losses, with  
robust short circuit capability. They are designed for ease  
of paralleling, minimal gate spike under high dV/dt  
conditions and resistance to oscillations. The soft co-  
package diode is targeted for minimal losses in motor  
control applications.  
VCE  
600V  
10A  
IC (TC=100°C)  
VCE(sat) (TC=25°C)  
1.53V  
100% Eon/Eoff Tested  
100% Qrr Tested  
100% Short Circuit Current Tested*  
Top View  
TO-220  
C
G
E
C
E
G
AOT10B60D  
Absolute Maximum Ratings TA=25°C unless otherwise noted  
Parameter  
Symbol  
V CE  
AOT10B60D  
Units  
Collector-Emitter Voltage  
Gate-Emitter Voltage  
600  
±20  
20  
V
V
V GE  
TC=25°C  
Continuous Collector  
Current  
I C  
A
TC=100°C  
10  
Pulsed Collector Current, Limited by TJmax  
I CM  
I LM  
40  
A
A
Turn off SOA, VCE 600V, Limited by TJmax  
40  
20  
10  
40  
TC=25°C  
Continuous Diode  
I F  
A
A
TC=100°C  
Forward Current  
Diode Pulsed Current, Limited by TJmax  
I FM  
Short circuit withstanding time VGE = 15V, VCE  
t SC  
10  
µs  
400V, Delay between short circuits 1.0s,  
TC=150°C  
TC=25°C  
163  
82  
P D  
W
°C  
TC=100°C  
Power Dissipation  
Junction and Storage Temperature Range  
T J , T STG  
-55 to 175  
Maximum lead temperature for soldering  
purpose, 1/8" from case for 5 seconds  
T L  
300  
°C  
Thermal Characteristics  
Parameter  
Symbol  
AOT10B60D  
Units  
°C/W  
°C/W  
°C/W  
R θ  
Maximum Junction-to-Ambient  
Maximum IGBT Junction-to-Case  
Maximum Diode Junction-to-Case  
* VCE equal to 50V  
65  
0.92  
1.7  
JA  
R θ  
JC  
R θ  
JC  
Rev1: Nov 2012  
www.aosmd.com  
Page 1 of 9  

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