Datasheet > AOT12N30

AOT12N30

更新时间： 2024-02-27 04:12:37

品牌	Logo	应用领域
美国万代 - AOS		/
页数	文件大小	规格书
6页	330K
描述
300V,11.5A N-Channel MOSFET

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技术参数
数据手册

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AOT12N30 技术参数

是否Rohs认证：	符合	生命周期：	Active
包装说明：	,	Reach Compliance Code：	compliant
风险等级：	2.3	配置：	Single
最大漏极电流 (Abs) (ID)：	11.5 A	FET 技术：	METAL-OXIDE SEMICONDUCTOR
工作模式：	ENHANCEMENT MODE	最高工作温度：	150 °C
极性/信道类型：	N-CHANNEL	最大功率耗散 (Abs)：	132 W
子类别：	FET General Purpose Power	表面贴装：	NO
Base Number Matches：	1

AOT12N30 数据手册

AOT12N30/AOTF12N30

300V,11.5A N-Channel MOSFET

General Description

Product Summary

V_DS

350V@150℃

11.5A

The AOT12N30/AOTF12N30 is fabricated using an

advanced high voltage MOSFET process that is designed

to deliver high levels of performance and robustness in

popular AC-DC applications.By providing low R_DS(on), C_iss

and C_rssalong with guaranteed avalanche capability this

parts can be adopted quickly into new and existing offline

power supply designs.These parts are ideal for boost

converters and synchronous rectifiers for consumer,

telecom, industrial power supplies and LED backlighting.

I_D(at V_GS=10V)

R_DS(ON)(at V_GS=10V)

< 0.42Ω

100% UIS Tested

100% R_gTested

For Halogen Free add "L" suffix to part number:

AOT12N30L/AOTF12N30L

Top View

TO-220

TO-220F

AOT12N30

AOTF12N30

Absolute Maximum Ratings T_A=25°C unless otherwise noted

Parameter

Symbol

V_DS

AOT12N30

AOTF12N30

Units

Drain-Source Voltage

Gate-Source Voltage

300

±30

V_GS

T_C=25°C

11.5

7.3

11.5*

7.3*

Continuous Drain

Current

I_D

T_C=100°C

Pulsed Drain Current ^C

I_DM

3.8

430

Avalanche Current ^C

I_AS

Single pulsed avalanche energy ^G

Peak diode recovery dv/dt

T_C=25°C

E_AS

dv/dt

V/ns

W/ ^oC

132

P_D

Power Dissipation ^B

Derate above 25^oC

0.3

Junction and Storage Temperature Range

T_J, T_STG

-55 to 150

300

°C

Maximum lead temperature for soldering

purpose, 1/8" from case for 5 seconds

Thermal Characteristics

T_L

°C

Parameter

Symbol

R_θJA

AOT12N30

AOTF12N30

Units

°C/W

Maximum Junction-to-Ambient ^A,D

0.5

Maximum Case-to-sink ^A

R_θCS

Maximum Junction-to-Case

R_θJC

0.95

3.5

Rev 1: Nov 2011

www.aosmd.com

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