Datasheet > AOT10N60L

AOT10N60L

更新时间： 2024-01-01 11:26:10

品牌	Logo	应用领域
美国万代 - AOS		/
页数	文件大小	规格书
6页	429K
描述
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET

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中文翻译

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技术参数
数据手册

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AOT10N60L 技术参数

是否Rohs认证：	符合	生命周期：	Active
包装说明：	,	Reach Compliance Code：	compliant
风险等级：	5.76	配置：	Single
最大漏极电流 (Abs) (ID)：	10 A	FET 技术：	METAL-OXIDE SEMICONDUCTOR
工作模式：	ENHANCEMENT MODE	最高工作温度：	150 °C
极性/信道类型：	N-CHANNEL	最大功率耗散 (Abs)：	250 W
子类别：	FET General Purpose Power	表面贴装：	NO
Base Number Matches：	1

AOT10N60L 数据手册

AOT10N60/AOB10N60/AOTF10N60

600V,10A N-Channel MOSFET

General Description

Product Summary

V_DS

700V@150℃

10A

The AOT10N60 & AOB10N60 & AOTF10N60 have been

fabricated using an advanced high voltage MOSFET

process that is designed to deliver high levels of

performance and robustness in popular AC-DC

applications.By providing low R_DS(on), C_issand C_rssalong

with guaranteed avalanche capability these parts can be

adopted quickly into new and existing offline power supply

designs.

I_D(at V_GS=10V)

R_DS(ON)(at V_GS=10V)

< 0.75Ω

100% UIS Tested

100% R_gTested

For Halogen Free add "L" suffix to part number:

AOT10N60L & AOTF10N60L & AOB10N60L

Top View

TO-263

D²PAK

TO-220

TO-220F

AOT10N60

AOTF10N60

AOB10N60

Absolute Maximum Ratings T_A=25°C unless otherwise noted

Parameter

Symbol

AOT10N60/AOB10N60

AOTF10N60

Units

Drain-Source Voltage

Gate-Source Voltage

V_DS

600

V_GS

±30

T_C=25°C

10*

Continuous Drain

Current

I_D

T_C=100°C

7.2

7.2*

Pulsed Drain Current ^C

Avalanche Current ^C

I_DM

I_AR

4.4

Repetitive avalanche energy ^C

Single plused avalanche energy ^G

E_AR

E_AS

290

580

MOSFET dv/dt ruggedness

Peak diode recovery dv/dt

T_C=25°C

dv/dt

V/ns

250

P_D

Power Dissipation ^B

Derate above 25^oC

W/ ^oC

°C

0.4

Junction and Storage Temperature Range

T_J, T_STG

-55 to 150

Maximum lead temperature for soldering

purpose, 1/8" from case for 5 seconds

Thermal Characteristics

T_L

300

°C

Parameter

Symbol

R_θJA

AOT10N60/AOB10N60

AOTF10N60

Units

Maximum Junction-to-Ambient ^A,D

°C/W

Maximum Case-to-sink ^A

R_θCS

0.5

°C/W

Maximum Junction-to-Case

R_θJC

2.5

* Drain current limited by maximum junction temperature.

Rev.8.0: March 2014

www.aosmd.com

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