Datasheet > AOSS21115C

AOSS21115C

更新时间： 2024-02-21 18:51:30

品牌	Logo	应用领域
美国万代 - AOS		/
页数	文件大小	规格书
5页	352K
描述
Power Field-Effect Transistor,

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中文翻译

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技术参数
数据手册

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AOSS21115C 技术参数

生命周期：	Active	包装说明：	,
Reach Compliance Code：	unknown	风险等级：	5.74
Base Number Matches：	1

AOSS21115C 数据手册

AOSS21115C

20V P-Channel MOSFET

General Description

Product Summary

V_DS

• Trench Power MOSFET technology

• Low R_DS(ON)

• Low Gate Charge

-20V

-4.5A

I_D(at V_GS=-4.5V)

R_DS(ON)(at V_GS=-4.5V)

R_DS(ON)(at V_GS=-2.5V)

R_DS(ON)(at V_GS=-1.8V)

< 40mΩ

< 55mΩ

< 72mΩ

• RoHS and Halogen-Free Compliant

Typical ESD protection

HBM Class 2

Applications

• This device is ideal for Load Switch

SOT23

Top View

Bottom View

Orderable Part Number

Package Type

Form

Tape & Reel

Minimum Order Quantity

AOSS21115C

SOT23-3

3000

Absolute Maximum Ratings T_A=25°C unless otherwise noted

Parameter

Symbol

V_DS

Maximum

Units

Drain-Source Voltage

Gate-Source Voltage

-20

±8

V_GS

T_A=25°C

T_A=70°C

-4.5

Continuous Drain

Current

I_D

-3.5

Pulsed Drain Current ^C

I_DM

P_D

-18

T_A=25°C

T_A=70°C

1.3

Power Dissipation ^B

0.8

Junction and Storage Temperature Range

T_J, T_STG

-55 to 150

°C

Thermal Characteristics

Parameter

Symbol

Typ

Max

Units

°C/W

Maximum Junction-to-Ambient ^A

t ≤ 10s

R_qJA

Maximum Junction-to-Ambient ^{A D}Steady-State

100

125

Maximum Junction-to-Lead

Steady-State

R_qJL

Rev.1.0: March 2019

www.aosmd.com

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