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AOT10N60 PDF预览

AOT10N60

更新时间: 2024-01-15 07:11:33
品牌 Logo 应用领域
美国万代 - AOS 晶体晶体管功率场效应晶体管
页数 文件大小 规格书
6页 183K
描述
600V, 10A N-Channel MOSFET

AOT10N60 技术参数

是否Rohs认证: 符合生命周期:Active
包装说明:,Reach Compliance Code:compliant
风险等级:5.76配置:Single
最大漏极电流 (Abs) (ID):10 AFET 技术:METAL-OXIDE SEMICONDUCTOR
工作模式:ENHANCEMENT MODE最高工作温度:150 °C
极性/信道类型:N-CHANNEL最大功率耗散 (Abs):250 W
子类别:FET General Purpose Power表面贴装:NO
Base Number Matches:1

AOT10N60 数据手册

 浏览型号AOT10N60的Datasheet PDF文件第2页浏览型号AOT10N60的Datasheet PDF文件第3页浏览型号AOT10N60的Datasheet PDF文件第4页浏览型号AOT10N60的Datasheet PDF文件第5页浏览型号AOT10N60的Datasheet PDF文件第6页 
AOT10N60 / AOTF10N60  
600V, 10A N-Channel MOSFET  
formerly engineering part number AOT9608/AOTF9608  
General Description  
Features  
The AOT10N60 & AOTF10N60 have been fabricated  
using an advanced high voltage MOSFET process  
that is designed to deliver high levels of performance  
and robustness in popular AC-DC applications.  
By providing low RDS(on), Ciss and Crss along with  
guaranteed avalanche capability these parts can be  
adopted quickly into new and existing offline power  
supply designs.  
VDS (V) = 700V @ 150°C  
ID = 10A  
RDS(ON) < 0.75 (VGS = 10V)  
100% UIS Tested!  
100% R g Tested!  
C iss , C oss , C rss Tested!  
Top View  
D
TO-220F  
TO-220  
G
G
G
D
S
D
S
S
Absolute Maximum Ratings TA=25°C unless otherwise noted  
Parameter  
Symbol  
VDS  
AOT10N60  
600  
AOTF10N60  
Units  
V
V
Drain-Source Voltage  
Gate-Source Voltage  
Continuous Drain  
Current B  
Pulsed Drain Current C  
Avalanche Current C  
VGS  
±30  
TC=25°C  
10  
10*  
TC=100°C  
ID  
6.4  
6.4*  
A
IDM  
IAR  
36  
4.4  
290  
580  
5
A
Repetitive avalanche energy C  
EAR  
EAS  
dv/dt  
mJ  
Single pulsed avalanche energy G  
Peak diode recovery dv/dt  
TC=25°C  
mJ  
V/ns  
W
208  
1.7  
50  
PD  
Power Dissipation B  
Derate above 25oC  
0.4  
W/ C  
o
TJ, TSTG  
Junction and Storage Temperature Range  
-50 to 150  
300  
°C  
°C  
Maximum lead temperature for soldering  
purpose, 1/8" from case for 5 seconds  
Thermal Characteristics  
TL  
Parameter  
Symbol  
RθJA  
AOT10N60  
AOTF10N60  
Units  
Maximum Junction-to-Ambient A  
Maximum Case-to-Sink A  
°C/W  
65  
65  
RθCS  
0.5  
0.6  
-
°C/W  
°C/W  
Maximum Junction-to-Case D,F  
RθJC  
2.5  
* Drain current limited by maximum junction temperature.  
Alpha & Omega Semiconductor, Ltd.  
www.aosmd.com  

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