Datasheet > AOT10T60P

AOT10T60P

更新时间： 2024-02-23 14:02:45

品牌	Logo	应用领域
美国万代 - AOS		/
页数	文件大小	规格书
7页	498K
描述
RoHS and Halogen Free Compliant

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中文翻译

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数据手册

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AOT10T60P 数据手册

AOT10T60P/AOB10T60P/AOTF10T60P

600V,10A N-Channel MOSFET

General Description

Product Summary

• Trench Power AlphaMOS-II technology

• Low R_DS(ON)

V_DS@ T_j,max

I_DM

700V

40A

• Low Ciss and Crss

• High Current Capability

• RoHS and Halogen Free Compliant

R_DS(ON),max

Q_g,typ

< 0.7Ω

26nC

3.5µJ

E_oss@ 400V

Applications

100% UIS Tested

100% R_gTested

• General Lighting for LED and CCFL

• AC/DC Power supplies for Industrial, Consumer,

and Telecom

Top View

TO-263

D²PAK

TO-220F

TO-220

AOT10T60P

AOB10T60P

AOTF10T60P

Orderable Part Number

AOT10T60PL

Package Type

TO-220 Green

Form

Tube

Minimum Order Quantity

1000

AOB10T60PL

AOTF10T60P

AOTF10T60PL

TO-263 Green

TO-220F Pb Free

TO-220F Green

Tape & Reel

Tube

800

1000

Tube

Absolute Maximum Ratings T_A=25°C unless otherwise noted

Parameter

Symbol AOT(B)10T60P AOTF10T60P AOTF10T60PL

Units

Drain-Source Voltage

Gate-Source Voltage

V_DS

V_GS

600

±30

10*

6.6*

T_C=25°C

10*

Continuous Drain

Current

Pulsed Drain Current ^C

Avalanche Current ^CL=1mH

Repetitive avalanche energy ^C

I_D

T_C=100°C

6.6

6.6*

I_DM

I_AR

E_AR

E_AS

Single pulsed avalanche energy ^G

MOSFET dv/dt ruggedness

Peak diode recovery dv/dt ^J

T_C=25°C

480

dv/dt

V/ns

W/°C

°C

208

1.7

0.3

P_D

Power Dissipation ^B

Derate above 25°C

0.26

Junction and Storage Temperature Range

T_J, T_STG

-55 to 150

Maximum lead temperature for soldering

purpose, 1/8" from case for 5 seconds

T_L

300

°C

Thermal Characteristics

Parameter

Symbol AOT(B)10T60P AOTF10T60P AOTF10T60PL

Units

Maximum Junction-to-Ambient ^A,D

R_θJA

°C/W

Maximum Case-to-sink ^A

R_θCS

R_θJC

0.5

0.6

°C/W

Maximum Junction-to-Case

2.9

3.8

* Drain current limited by maximum junction temperature.

Rev.2.0: March 2014

www.aosmd.com

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