Datasheet > AOT11S65

AOT11S65

更新时间： 2024-01-06 02:06:16

品牌	Logo	应用领域
美国万代 - AOS		晶体晶体管
页数	文件大小	规格书
7页	305K
描述
650V 11A a MOS Power Transistor

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数据手册

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AOT11S65 数据手册

AOT11S65/AOB11S65/AOTF11S65

650V 11A

MOS ^TMPower Transistor

General Description

Product Summary

V_DS@ T_j,max

I_DM

R_DS(ON),max

Q_g,typ

750V

The AOT11S65 & AOB11S65 & AOTF11S65 have been

fabricated using the advanced αMOS^TMhigh voltage

process that is designed to deliver high levels of

performance and robustness in switching applications.

By providing low R_DS(on), Q_gand E_OSSalong with

guaranteed avalanche capability these parts can be

adopted quickly into new and existing offline power supply

designs.

45A

0.399Ω

13.2nC

2.9µJ

E_oss@ 400V

100% UIS Tested

100% R_gTested

For Halogen Free add "L" suffix to part number:

AOT11S65L & AOB11S65L & AOTF11S65L

Top View

TO-263

D²PAK

TO-220

TO-220F

AOT11S65

AOTF11S65

AOB11S65

Absolute Maximum Ratings T_A=25°C unless otherwise noted

Parameter

Symbol

AOT11S65/AOB11S65

AOTF11S65

AOTF11S65L

Units

Drain-Source Voltage

V_DS

650

Gate-Source Voltage

V_GS

±30

11*

T_C=25°C

11*

Continuous Drain

Current

I_D

T_C=100°C

Pulsed Drain Current ^C

Avalanche Current ^C

I_DM

I_AR

Repetitive avalanche energy ^C

Single pulsed avalanche energy ^G

T_C=25°C

E_AR

E_AS

120

198

1.6

P_D

Power Dissipation ^B

Derate above 25^oC

0.31

100

0.25

W/ ^o

MOSFET dv/dt ruggedness

Peak diode recovery dv/dt ^H

dv/dt

V/ns

°C

Junction and Storage Temperature Range

T_J, T_STG

-55 to 150

Maximum lead temperature for soldering

purpose, 1/8" from case for 5 seconds ^J

Thermal Characteristics

T_L

300

°C

Parameter

Symbol

AOT11S65/AOB11S65

AOTF11S65

AOTF11S65L

Units

Maximum Junction-to-Ambient ^A,D

R_θJA

°C/W

Maximum Case-to-sink ^A

R_θCS

R_θJC

0.5

°C/W

Maximum Junction-to-Case

0.63

3.25

* Drain current limited by maximum junction temperature.

Rev1: Mar 2012

www.aosmd.com

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