Datasheet > AOSN21319C

AOSN21319C

更新时间： 2024-01-14 16:14:57

品牌	Logo	应用领域
美国万代 - AOS		/
页数	文件大小	规格书
5页	307K
描述
Power Field-Effect Transistor,

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技术参数
数据手册

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AOSN21319C 技术参数

生命周期：	Active	包装说明：	,
Reach Compliance Code：	unknown	风险等级：	5.73
Base Number Matches：	1

AOSN21319C 数据手册

AOSN21319C

30V P-Channel MOSFET

General Description

Product Summary

V_DS

• Trench Power MOSFET technology

• Low R_DS(ON)

• Low Gate Charge

-30V

-2.6A

I_D(at V_GS=-10V)

R_DS(ON)(at V_GS=-10V)

R_DS(ON)(at V_GS=-4.5V)

< 100mΩ

< 150mΩ

• RoHS and Halogen-Free Compliant

ESD protection

Applications

• This device is ideal for Load Switch

SC-70

(SOT-323)

Top View

Bottom View

Orderable Part Number

Package Type

Form

Tape & Reel

Minimum Order Quantity

AOSN21319C

SC70-3

3000

Absolute Maximum Ratings T_A=25°C unless otherwise noted

Parameter

Symbol

V_DS

Maximum

-30

Units

Drain-Source Voltage

Gate-Source Voltage

V_GS

±20

T_A=25°C

T_A=70°C

-2.6

Continuous Drain

Current

I_D

-2.0

Pulsed Drain Current ^C

I_DM

P_D

-10

T_A=25°C

T_A=70°C

1.1

Power Dissipation ^B

0.7

Junction and Storage Temperature Range

T_J, T_STG

-55 to 150

°C

Thermal Characteristics

Parameter

Symbol

Typ

Max

110

135

Units

°C/W

Maximum Junction-to-Ambient ^A

t ≤ 10s

R_qJA

Maximum Junction-to-Ambient ^{A D}Steady-State

110

Maximum Junction-to-Lead

Steady-State

R_qJL

Rev.1.0: August 2019

www.aosmd.com

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