Datasheet > AOT11S60

AOT11S60

更新时间： 2024-02-16 00:43:21

品牌	Logo	应用领域
飞思卡尔 - FREESCALE		晶体晶体管
页数	文件大小	规格书
6页	610K
描述
600V 11A a MOS TM Power Transistor

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

AOT11S60 数据手册

AOT11S60/AOB11S60/AOTF11S60

600V 11A

MOS ^TMPower Transistor

General Description

The AOT11S60& AOB11S60 & AOTF11S60 have been fabricated using the advanced αMOS^TMhigh voltage

performance and robustness in switching applications.

process that is designed to deliver high levels of

By providing low R_DS(on), Q_gand E_OSSalong with guaranteed avalanche capability these parts can be

adopted quickly into new and existing offline power supply

designs.

Features

V_DS@ T_j,max

700V

45A

I_DM

R_DS(ON),max

Q_g,typ

0.399Ω

11nC

2.7µJ

E_oss@ 400V

Absolute Maximum Ratings T_A=25°C unless otherwise noted

Parameter

Symbol

AOT11S60/AOB11S60

AOTF11S60

Units

Drain-Source Voltage

Gate-Source Voltage

V_DS

600

V_GS

±30

T_C=25°C

11*

Continuous Drain

Current

I_D

T_C=100°C

Pulsed Drain Current ^C

Avalanche Current ^C

I_DM

I_AR

Repetitive avalanche energy ^C

Single pulsed avalanche energy ^G

T_C=25°C

E_AR

E_AS

120

W/ ^oC

178

P_D

Power Dissipation ^B

Derate above 25^oC

1.4

100

0.3

MOSFET dv/dt ruggedness

Peak diode recovery dv/dt ^H

dv/dt

V/ns

°C

Junction and Storage Temperature Range

T_J, T_STG

-55 to 150

Maximum lead temperature for soldering

purpose, 1/8" from case for 5 seconds ^J

Thermal Characteristics

T_L

300

°C

Parameter

Symbol

AOT11S60/AOB11S60

AOTF11S60

Units

Maximum Junction-to-Ambient ^A,D

R_θJA

°C/W

Maximum Case-to-sink ^A

R_θCS

R_θJC

0.5

0.7

°C/W

Maximum Junction-to-Case

3.25

* Drain current limited by maximum junction temperature.

1/6

www.freescale.net.cn

12 3 4 5 6

中文翻译

下载PDF

与AOT11S60相关器件

型号	品牌	获取价格	描述	数据表
AOT11S65	AOS	获取价格	650V 11A a MOS Power Transistor
AOT12N30	AOS	获取价格	300V,11.5A N-Channel MOSFET
AOT12N30	FREESCALE	获取价格	300V,11.5A N-Channel MOSFET
AOT12N30L	AOS	获取价格	Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET
AOT12N40	AOS	获取价格	400V,11A N-Channel MOSFET
AOT12N40L	AOS	获取价格	Transistor
AOT12N50	AOS	获取价格	500V, 12A N-Channel MOSFET
AOT12N50L	AOS	获取价格	Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET
AOT12N60	AOS	获取价格	600V, 12A N-Channel MOSFET
AOT12N60	FREESCALE	获取价格	600V,12A N-Channel MOSFET