Datasheet > AOT11N60

AOT11N60

更新时间： 2024-02-10 06:23:33

品牌	Logo	应用领域
美国万代 - AOS		/
页数	文件大小	规格书
6页	551K
描述
600V,11A N-Channel MOSFET

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AOT11N60 数据手册

AOT11N60/AOTF11N60

600V,11A N-Channel MOSFET

General Description

Product Summary

V_DS

The AOT11N60 & AOTF11N60 have been fabricated

using an advanced high voltage MOSFET process that is

designed to deliver high levels of performance and

robustness in popular AC-DC applications.By providing

low R_DS(on), C_issand C_rssalong with guaranteed avalanche

capability these parts can be adopted quickly into new

and existing offline power supply designs.

700V@150℃

I_D(at V_GS=10V)

R_DS(ON)(at V_GS=10V)

11A

< 0.65Ω

100% UIS Tested

100% R_gTested

For Halogen Free add "L" suffix to part number:

AOT11N60L & AOTF11N60L

Top View

TO-220

TO-220F

AOT11N60

AOTF11N60

Absolute Maximum Ratings T_A=25°C unless otherwise noted

Parameter

Symbol

AOT11N60

AOTF11N60

AOTF11N60L

Units

Drain-Source Voltage

V_DS

600

Gate-Source Voltage

V_GS

±30

11*

T_C=25°C

11*

Continuous Drain

Current

I_D

T_C=100°C

Pulsed Drain Current ^C

Avalanche Current ^C

Repetitive avalanche energy ^C

I_DM

I_AR

4.8

345

E_AR

E_AS

dv/dt

Single plused avalanche energy ^G

Peak diode recovery dv/dt

T_C=25°C

690

V/ns

W/ ^o

272

2.2

37.9

0.3

P_D

Power Dissipation ^B

Derate above 25^oC

0.4

Junction and Storage Temperature Range

T_J, T_STG

-55 to 150

°C

Maximum lead temperature for soldering

purpose, 1/8" from case for 5 seconds

Thermal Characteristics

T_L

300

°C

Parameter

Symbol

R_θJA

AOT11N60

AOTF11N60

AOTF11N60L

Units

Maximum Junction-to-Ambient ^A,D

°C/W

Maximum Case-to-sink ^A

R_θCS

R_θJC

0.5

°C/W

Maximum Junction-to-Case

0.46

2.5

3.3

* Drain current limited by maximum junction temperature.

ev 0: Jan 2012

www.aosmd.com

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