Datasheet > AOT1100L

AOT1100L

更新时间： 2024-01-24 01:42:06

品牌	Logo	应用领域
美国万代 - AOS		/
页数	文件大小	规格书
6页	297K
描述
100V N-Channel Rugged Planar MOSFET

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AOT1100L 数据手册

AOT1100L/AOB1100L

100V N-Channel Rugged Planar MOSFET

General Description

Product Summary

V_DS

100V

The AOT1100L/AOB1100L uses a robust technology that

is designed to provide efficient and reliable power

conversion even in the most demanding applications,

including motor control. With low R_DS(ON)and excellent

thermal capability this device is appropriate for high

current switching and can endure adverse operating

conditions.This device is ideal for boost converters and

synchronous rectifiers for consumer, telecom, industrial

power supplies and LED backlighting.

I_D(at V_GS=10V)

R_DS(ON)(at V_GS=10V)

130A

< 12mΩ

100% UIS Tested

100% R_gTested

TO-263

D²PAK

TO220

Top View

Bottom View

Top View

Bottom View

AOT1100

AOB1100

Absolute Maximum Ratings T_A=25°C unless otherwise noted

Parameter

Symbol

V_DS

Maximum

Units

Drain-Source Voltage

Gate-Source Voltage

100

±20

130

V_GS

T_C=25°C

Continuous Drain

Current ^G

I_D

T_C=100°C

Pulsed Drain Current ^C

I_DM

208

T_A=25°C

T_A=70°C

Continuous Drain

Current

Avalanche Current ^C

Avalanche energy L=0.1mH ^C

I_DSM

I_AS

122

744

500

250

2.1

E_AS

T_C=25°C

P_D

Power Dissipation ^B

T_C=100°C

T_A=25°C

P_DSM

°C

Power Dissipation ^A

1.3

T_A=70°C

Junction and Storage Temperature Range

T_J, T_STG

-55 to 175

Thermal Characteristics

Parameter

Symbol

Typ

Max

Units

°C/W

Maximum Junction-to-Ambient ^A

Maximum Junction-to-Ambient ^{A D}

Maximum Junction-to-Case

≤ 10s

R_θJA

Steady-State

R_θJC

0.22

0.3

Rev0: Dec 2011

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