Datasheet > AOSD21313C

AOSD21313C

更新时间： 2024-02-04 07:25:43

品牌	Logo	应用领域
美国万代 - AOS		/
页数	文件大小	规格书
5页	329K
描述
Power Field-Effect Transistor,

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技术参数
数据手册

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AOSD21313C 技术参数

生命周期：	Active	包装说明：	,
Reach Compliance Code：	unknown	风险等级：	5.75
Base Number Matches：	1

AOSD21313C 数据手册

AOSD21313C

30V Dual P-Channel MOSFET

General Description

Product Summary

V_DS

• Latest Advanced Trench Technology

• Low R_DS(ON)

• High Current Capability

-30V

-5.7A

I_D(at V_GS=-10V)

R_DS(ON)(at V_GS=-10V)

R_DS(ON)(at V_GS=-4.5V)

< 32mΩ

< 55mΩ

• RoHS and Halogen-Free Compliant

ESD protection

Applications

100% UIS Tested

100% Rg Tested

• Notebook AC-in Load Switch

• Battery Protection Charge/Discharge

SO-8

Top View

Bottom View

Top View

Pin1

Orderable Part Number

Package Type

Form

Tape & Reel

Minimum Order Quantity

AOSD21313C

SO-8

3000

Absolute Maximum Ratings T_A=25°C unless otherwise noted

Parameter

Symbol

V_DS

Max

-30

Units

Drain-Source Voltage

Gate-Source Voltage

V_GS

±20

T_A=25°C

T_A=70°C

-5.7

-4.4

-23

Continuous Drain

Current

Pulsed Drain Current ^C

Avalanche Current ^C

Avalanche energy

I_D

I_DM

I_AS

L=0.1mH

T_A=25°C

T_A=70°C

E_AS

1.7

Power Dissipation ^B

P_D

1.1

Junction and Storage Temperature Range

T_J, T_STG

-55 to 150

°C

Thermal Characteristics

Parameter

Symbol

Typ

Max

Units

°C/W

Maximum Junction-to-Ambient ^A

t ≤ 10s

100

R_qJA

Maximum Junction-to-Ambient ^{A D}Steady-State

Maximum Junction-to-Lead

Steady-State

R_qJL

Rev.1.1: September 2019

www.aosmd.com

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