Datasheet > AOD4C60

AOD4C60

更新时间： 2024-09-13 12:51:55

品牌	Logo	应用领域
美国万代 - AOS		/
页数	文件大小	规格书
6页	262K
描述
600V, 4A- N-Channel MOSFET

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AOD4C60 数据手册

AOD4C60

600V,4A N-Channel MOSFET

General Description

Product Summary

V_DS@ T_j,max

I_DM

700

The AOD4C60 is fabricated using an advanced high

voltage MOSFET process that is designed to deliver high

levels of performance and robustness in popular AC-DC

applications. By providing low R_DS(on), C_issand C_rssalong

with guaranteed avalanche capability this part can be

adopted quickly into new and existing offline power supply

designs.

27A

R_DS(ON),max

Q_g,typ

< 0.95Ω

14nC

2.7µC

E_oss@ 400V

100% UIS Tested!

100% R_gTested!

TO252

DPAK

Top View

Bottom View

AOD4C60

Absolute Maximum Ratings T_A=25°C unless otherwise noted

Parameter

Symbol

V_DS

Maximum

Units

Drain-Source Voltage

Gate-Source Voltage

600

±30

V_GS

T_C=25°C

Continuous Drain

Current^B

I_D

T_C=100°C

3.5

Pulsed Drain Current ^C

I_DM

I_AR

8.5

Avalanche Current ^C

Repetitive avalanche energy ^C

E_AR

E_AS

Single pulsed avalanche energy ^H

MOSFET dv/dt ruggedness

Peak diode recovery dv/dt

T_C=25°C

326

100

dv/dt

V/ns

125

P_D

Power Dissipation ^B

Derate above 25^oC

W/ ^oC

°C

Junction and Storage Temperature Range

T_J, T_STG

-50 to 150

Maximum lead temperature for soldering

purpose, 1/8" from case for 5 seconds

T_L

300

°C

Thermal Characteristics

Parameter

Symbol

R_θJA

Typical

Maximum

Units

°C/W

Maximum Junction-to-Ambient ^A,G

0.5

Maximum Case-to-sink ^A

Maximum Junction-to-Case^D,F

R_θCS

R_θJC

0.7

Rev.1.0 April 2013

www.aosmd.com

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