Datasheet > AOD496A

AOD496A

更新时间： 2024-09-13 12:24:23

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飞思卡尔 - FREESCALE		/
页数	文件大小	规格书
6页	367K
描述
30V N-Channel MOSFET

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AOD496A 数据手册

AOD496A

30V N-Channel MOSFET

General Description

provide excellent R_DS(ON)with low gate charge.

The AOD496A uses advanced trench technology to

This device is suitable for high side switch in SMPS and general purpose applications.

Features

V_DS

30V

I_D(at V_GS=10V)

R_DS(ON)(at V_GS=10V)

R_DS(ON)(at V_GS= 4.5V)

57A

< 9mΩ

< 14mΩ

Absolute Maximum Ratings T_A=25°C unless otherwise noted

Parameter

Symbol

V_DS

Maximum

Units

Drain-Source Voltage

Gate-Source Voltage

±20

V_GS

T_C=25°C

Continuous Drain

Current

Pulsed Drain Current ^C

I_D

T_C=100°C

I_DM

100

T_A=25°C

T_A=70°C

Continuous Drain

Current

Avalanche Current ^C

Avalanche energy L=0.1mH ^C

I_DSM

I_AS, I_AR

E_AS, E_AR

T_C=25°C

Power Dissipation ^B

T_C=100°C

P_D

T_A=25°C

2.3

P_DSM

°C

Power Dissipation ^A

1.5

T_A=70°C

Junction and Storage Temperature Range

T_J, T_STG

-55 to 175

Thermal Characteristics

Parameter

Symbol

Typ

Max

Units

°C/W

Maximum Junction-to-Ambient ^A

Maximum Junction-to-Ambient ^{A D}

Maximum Junction-to-Case

≤ 10s

R_θJA

Steady-State

R_θJC

2.4

1/6

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