Datasheet > AOD498

AOD498

更新时间： 2024-09-13 12:51:35

品牌	Logo	应用领域
美国万代 - AOS		/
页数	文件大小	规格书
6页	293K
描述
100V N-Channel MOSFET

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AOD498 数据手册

AOD498

100V N-Channel MOSFET

General Description

Product Summary

V_DS

100V

The AOD498 combines advanced trench MOSFET

technology with a low resistance package to provide

extremely low R_DS(ON). This device is ideal for boost

converters and synchronous rectifiers for consumer,

telecom, industrial power supplies and LED backlighting.

I_D(at V_GS=10V)

R_DS(ON)(at V_GS=10V)

R_DS(ON)(at V_GS=4.5V)

11A

< 140mΩ

< 152mΩ

100% UIS Tested

100% R_gTested

TO252

DPAK

Top View

Bottom View

Absolute Maximum Ratings T_A=25°C unless otherwise noted

Parameter

Symbol

V_DS

Maximum

Units

Drain-Source Voltage

Gate-Source Voltage

100

±20

V_GS

T_C=25°C

Continuous Drain

Current

Pulsed Drain Current ^C

I_D

T_C=100°C

I_DM

T_A=25°C

T_A=70°C

2.5

Continuous Drain

Current

Avalanche Current ^C

Avalanche energy L=0.1mH ^C

I_DSM

I_AS

E_AS

T_C=25°C

P_D

Power Dissipation ^B

T_C=100°C

T_A=25°C

2.1

P_DSM

°C

Power Dissipation ^A

1.3

T_A=70°C

Junction and Storage Temperature Range

T_J, T_STG

-55 to 175

Thermal Characteristics

Parameter

Symbol

Typ

Max

Units

°C/W

Maximum Junction-to-Ambient ^A

Maximum Junction-to-Ambient ^{A D}

Maximum Junction-to-Case

≤ 10s

R_θJA

Steady-State

R_θJC

2.7

3.3

Rev 0: August 2012

www.aosmd.com

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