Datasheet > AO4902

AO4902

更新时间： 2024-11-04 12:51:11

品牌	Logo	应用领域
飞思卡尔 - FREESCALE		晶体肖特基二极管晶体管场效应晶体管
页数	文件大小	规格书
5页	213K
描述
Dual N-Channel Enhancement Mode Field Effect Transistor with Schottky Diode

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AO4902

Dual N-Channel Enhancement Mode Field

Effect Transistor with Schottky Diode

General Description

The AO4902 uses advanced trench technology to provide

excellent R_DS(ON)and low gate charge. The two identical

MOSFETs are co-packaged in parallel with a Schottkydiode, making them ideal for many bridge and totem pole

applications, for e.g. DDR memory.

Standard Product AO4902 is Pb-free (meets ROHS & Sony 259

specifications). AO4902L is a Green Product ordering

option. AO4902 and AO4902L are electrically identical.

Features

V_DS(V) = 30V

I_D= 6.9A (V_GS= 10V)

R_DS(ON)< 27mΩ (V_GS= 10V)

R_DS(ON)< 32mΩ (V_GS= 4.5V)

R_DS(ON)< 50mΩ (V_GS= 2.5V)

SCHOTTKY

_DS(V) = 30V, I_F= 3A, V_F=0.5V@1A

S2/A2

S1/A1

D2/K2

D1/K1

SOIC-8

Absolute Maximum Ratings T =25°C unless otherwise noted

Parameter

Symbol

MOSFET

Schottky

Units

V_DS

Drain-Source Voltage

Gate-Source Voltage

V_GS

±12

T_A=25°C

T_A=70°C

6.9

I_D

Continuous Drain Current^A

Pulsed Drain Current^B

5.8

I_DM

V_KA

Schottky reverse voltage

T_A=25°C

T_A=70°C

I_F

I_FM

Continuous Forward Current^A

Pulsed Forward Current^B

T_A=25°C

T_A=70°C

P_D

°C

Power Dissipation

1.44

T_J, T_STG

Junction and Storage Temperature Range

-55 to 150

Parameter: Thermal Characteristics MOSFET

Symbol

Typ

Max

Units

Maximum Junction-to-Ambient^A

62.5

t ≤ 10s

R_θJA

Steady-State

Maximum Junction-to-Lead^C

Steady-State

°C/W

110

R_θJL

Thermal Characteristics Schottky

Maximum Junction-to-Ambient^A

Maximum Junction-to-Lead^C

Steady-State

t ≤ 10s

47.5

62.5

R_θJA

R_θJL

Steady-State

110

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与AO4902相关器件

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