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AO4904

更新时间: 2024-09-15 08:31:03
品牌 Logo 应用领域
美国万代 - AOS 晶体肖特基二极管晶体管场效应晶体管
页数 文件大小 规格书
5页 147K
描述
Dual N-Channel Enhancement Mode Field Effect Transistor with Schottky Diode

AO4904 技术参数

生命周期:Obsolete包装说明:,
Reach Compliance Code:compliant风险等级:5.58
Base Number Matches:1

AO4904 数据手册

 浏览型号AO4904的Datasheet PDF文件第2页浏览型号AO4904的Datasheet PDF文件第3页浏览型号AO4904的Datasheet PDF文件第4页浏览型号AO4904的Datasheet PDF文件第5页 
AO4904  
Dual N-Channel Enhancement Mode Field Effect Transistor  
with Schottky Diode  
General Description  
Features  
VDS (V) = 30V  
The AO4904 uses advanced trench technology to provide  
excellent RDS(ON) and low gate charge. The two  
MOSFETs make a compact and efficient switch and  
synchronous rectifier combination for use in DC-DC  
converters. A Schottky diode is co-packaged in parallel  
with the synchronous MOSFET to boost efficiency further  
Standard Product AO4904 is Pb-free (meets ROHS &  
Sony 259 specifications). AO4904L is a Green Product  
ordering option. AO4904 and AO4904L are electrically  
identical.  
ID = 6.9A (VGS = 10V)  
R
DS(ON) < 27m(VGS = 10V)  
RDS(ON) < 32m(VGS = 4.5V)  
DS(ON) < 50m(VGS = 2.5V)  
R
SCHOTTKY  
VDS (V) = 30V, IF = 3A, VF=0.5V@1A  
D1  
S1  
D2  
1
2
3
4
8
7
6
5
S2  
G2  
S1/A  
D2  
D2  
D1/K  
D1/K  
K
A
G1  
SOIC-8  
G1  
G2  
S2  
Absolute Maximum Ratings TA=25°C unless otherwise noted  
Parameter  
MOSFET  
Schottky  
Symbol  
Units  
VDS  
Drain-Source Voltage  
Gate-Source Voltage  
30  
V
V
VGS  
±12  
6.9  
TA=25°C  
TA=70°C  
ID  
Continuous Drain CurrentA  
Pulsed Drain CurrentB  
A
5.8  
40  
IDM  
VKA  
Schottky reverse voltage  
30  
3
V
A
TA=25°C  
TA=70°C  
IF  
IFM  
Continuous Forward CurrentA  
Pulsed Forward CurrentB  
2
40  
2
TA=25°C  
TA=70°C  
2
PD  
W
°C  
Power Dissipation  
1.44  
1.44  
TJ, TSTG  
Junction and Storage Temperature Range  
-55 to 150  
-55 to 150  
Parameter: Thermal Characteristics MOSFET  
Typ  
Max  
Symbol  
Units  
Maximum Junction-to-AmbientA  
Maximum Junction-to-AmbientA  
48  
62.5  
t 10s  
RθJA  
Steady-State  
Maximum Junction-to-LeadC  
Steady-State  
°C/W  
°C/W  
74  
35  
110  
40  
RθJL  
Thermal Characteristics Schottky  
Maximum Junction-to-AmbientA  
Maximum Junction-to-AmbientA  
Maximum Junction-to-LeadC  
Steady-State  
t 10s  
47.5  
62.5  
RθJA  
RθJL  
Steady-State  
71  
32  
110  
40  
Alpha & Omega Semiconductor, Ltd.  

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