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AO4906 PDF预览

AO4906

更新时间: 2024-11-18 08:31:03
品牌 Logo 应用领域
美国万代 - AOS 晶体肖特基二极管晶体管场效应晶体管
页数 文件大小 规格书
5页 122K
描述
Dual N-Channel Enhancement Mode Field Effect Transistor with Schottky Diode

AO4906 技术参数

生命周期:Obsolete包装说明:,
Reach Compliance Code:unknown风险等级:5.81
Base Number Matches:1

AO4906 数据手册

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AO4906  
Dual N-Channel Enhancement Mode Field Effect Transistor with Schottky Diode  
General Description  
Features  
The AO4906 uses advanced trench technology to  
provide excellent RDS(ON) and low gate charge. The  
two MOSFETs make a compact and efficient switch  
and synchronous rectifier combination for use in DC-  
DC converters. A Schottky diode is co-packaged in  
parallel with the synchronous MOSFET to boost  
efficiency further.Standard Product AO4906 is Pb-  
free (meets ROHS & Sony 259 specifications).  
AO4906L is a Green Product ordering option.  
AO4906 and AO4906L are electrically identical.  
VDS (V) = 30V  
ID = 7A (VGS = 10V)  
RDS(ON) < 27m(VGS = 10V)  
RDS(ON) < 32m(VGS = 4.5V)  
RDS(ON) < 50m(VGS = 2.5V)  
SCHOTTKY  
V
DS (V) = 30V, IF = 3A, VF=0.5V@1A  
D1  
S1  
D2  
1
2
3
4
8
7
6
5
D2  
D2  
G1  
G2  
K
A
D1/S2/K  
D1/S2/K  
D1/S2/K  
S1/A  
G1  
G2  
SOIC-8  
S2  
Absolute Maximum Ratings T =25°C unless otherwise noted  
A
Parameter  
Symbol  
MOSFET  
Schottky  
Units  
VDS  
Drain-Source Voltage  
Gate-Source Voltage  
30  
±12  
7
V
V
VGS  
TA=25°C  
TA=70°C  
ID  
Continuous Drain CurrentA  
Pulsed Drain CurrentB  
A
6
IDM  
40  
VKA  
Schottky reverse voltage  
30  
3
V
A
TA=25°C  
TA=70°C  
IF  
IFM  
Continuous Forward CurrentA  
Pulsed Forward CurrentB  
2
40  
2
TA=25°C  
TA=70°C  
2
PD  
W
°C  
Power Dissipation  
1.44  
1.44  
TJ, TSTG  
Junction and Storage Temperature Range  
-55 to 150  
-55 to 150  
Parameter: Thermal Characteristics MOSFET  
Symbol  
Typ  
48  
Max  
Units  
Maximum Junction-to-AmbientA  
62.5  
t 10s  
RθJA  
Maximum Junction-to-AmbientA  
74  
110  
40  
Steady-State  
°C/W  
°C/W  
Maximum Junction-to-LeadC  
Steady-State  
Thermal Characteristics Schottky  
RθJL  
35  
Maximum Junction-to-AmbientA  
47.5  
71  
62.5  
t 10s  
RθJA  
RθJL  
Maximum Junction-to-AmbientA  
110  
40  
Steady-State  
Maximum Junction-to-LeadC  
Steady-State  
32  
Alpha & Omega Semiconductor, Ltd.  

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