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AO4406 PDF预览

AO4406

更新时间: 2024-11-29 22:05:43
品牌 Logo 应用领域
阿尔法 - ALPHA 晶体晶体管场效应晶体管
页数 文件大小 规格书
7页 227K
描述
N CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

AO4406 数据手册

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March 2002  
AO4406  
N-Channel Enhancement Mode Field Effect Transistor  
General Description  
Features  
The AO4406 uses advanced trench technology to  
provide excellent RDS(ON), low gate charge and  
operation with gate voltages as low as 2.5V. This  
device makes an excellent high side switch for  
notebook CPU core DC-DC conversion.  
VDS (V) = 30V  
ID = 11.5A  
R
DS(ON) < 14m(VGS = 10V)  
RDS(ON) < 16.5m(VGS = 4.5V)  
R
DS(ON) < 26m(VGS = 2.5V)  
D
S
S
S
S
G
D
D
D
D
G
SOIC-8  
Absolute Maximum Ratings TA=25°C unless otherwise noted  
Parameter  
Symbol  
Maximum  
Units  
V
VDS  
Drain-Source Voltage  
30  
VGS  
Gate-Source Voltage  
Continuous Drain  
Current A  
±12  
11.5  
9.6  
80  
25  
78  
3
2.1  
V
TA=25°C  
TA=70°C  
A
ID  
Pulsed Drain Current B  
Avalanche Current B,E  
IDM  
IAV  
EAV  
A
mJ  
Repetitive Avalanche Energy B,E L=0.1mH  
TA=25°C  
Power Dissipation  
PD  
W
TA=70°C  
TJ, TSTG  
Junction and Storage Temperature Range  
-55 to 150  
°C  
Thermal Characteristics  
Parameter  
Symbol  
Typ  
23  
Max  
40  
Units  
°C/W  
°C/W  
°C/W  
Maximum Junction-to-Ambient A  
Maximum Junction-to-Ambient A  
Maximum Junction-to-Lead C  
t 10s  
Steady-State  
Steady-State  
RθJA  
48  
65  
RθJL  
12  
16  
Alpha & Omega Semiconductor, Ltd.  

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