Datasheet > AO4406A

AO4406A

更新时间： 2024-02-07 07:07:18

品牌	Logo	应用领域
飞思卡尔 - FREESCALE		/
页数	文件大小	规格书
6页	265K
描述
30V N-Channel MOSFET

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AO4406A 数据手册

AO4406A

30V N-Channel MOSFET

General Description

provide excellent R

The AO4406A uses advanced trench technology to

with low gate charge.

DS(ON)

This device is suitable for high side switch in SMPS and

general purpose applications.

Features

V_DS

30V

13A

I_D(at V_GS=10V)

R_DS(ON)(at V_GS=10V)

R_DS(ON)(at V_GS= 4.5V)

< 11.5mΩ

< 15.5mΩ

Absolute Maximum Ratings T_A=25°C unless otherwise noted

Parameter

Symbol

Maximum

Units

Drain-Source Voltage

V_DS

Gate-Source Voltage

V_GS

±20

T_A=25°C

T_A=70°C

Continuous Drain

Current

Pulsed Drain Current ^C

Avalanche Current ^C

I_D

10.4

100

I_DM

I_AS

Avalanche energy L=0.1mH ^C

T_A=25°C

E_AS

3.1

P_D

°C

Power Dissipation ^B

T_A=70°C

Junction and Storage Temperature Range

T_J, T_STG

-55 to 150

Thermal Characteristics

Parameter

Symbol

Typ

Max

Units

°C/W

Maximum Junction-to-Ambient ^A

Maximum Junction-to-Ambient ^{A D}

Maximum Junction-to-Lead

≤ 10s

R_θJA

Steady-State

R_θJL

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