Datasheet > AO4403

AO4403

更新时间： 2024-11-17 22:05:43

品牌	Logo	应用领域
美国万代 - AOS		晶体晶体管场效应晶体管
页数	文件大小	规格书
6页	214K
描述
P-Channel Enhancement Mode Field Effect Transistor

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AO4403 数据手册

December 2001

AO4403

P-Channel Enhancement Mode Field Effect Transistor

General Description

Features

The AO4403 uses advanced trench technology to

provide excellent R_DS(ON), low gate charge and

operation with gate voltages as low as 2.5V. This

device is suitable for use as a load switch or in PWM

applications. The source leads are separated to allow

a Kelvin connection to the source, which may be

used to bypass the source inductance.

V_DS(V) = -30V

I_D= -6.1 A

R_DS(ON)< 46mΩ (V_GS= -10V)

R_DS(ON)< 61mΩ (V_GS= -4.5V)

R_DS(ON)< 117mΩ (V_GS= -2.5V)

SOIC-8

Top View

Absolute Maximum Ratings T_A=25°C unless otherwise noted

Parameter

Symbol

Maximum

-30

Units

V_DS

V_GS

Drain-Source Voltage

Gate-Source Voltage

±12

T_A=25°C

T_A=70°C

-6.1

-5.1

-60

Continuous Drain

Current ^A

I_D

I_DM

Pulsed Drain Current ^B

T_A=25°C

T_A=70°C

2.1

-55 to 150

P_D

Power Dissipation ^A

T_J, T_STG

Junction and Storage Temperature Range

°C

Thermal Characteristics

Parameter

Symbol

Typ

Max

Units

°C/W

Maximum Junction-to-Ambient ^A

Maximum Junction-to-Lead ^C

t ≤ 10s

Steady-State

R_θJA

R_θJL

Alpha & Omega Semiconductor, Ltd.

12 3 4 5 6

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