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AO4406

更新时间: 2024-11-20 12:51:27
品牌 Logo 应用领域
美国万代 - AOS 晶体晶体管
页数 文件大小 规格书
6页 103K
描述
N-Channel Enhancement Mode Field Effect Transistor

AO4406 数据手册

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AO4406  
N-Channel Enhancement Mode Field Effect Transistor  
General Description  
Features  
The AO4406/L uses advanced trench technology to  
provide excellent RDS(ON), low gate charge and  
operation with gate voltages as low as 2.5V. This  
device makes an excellent high side switch for  
notebook CPU core DC-DC conversion. AO4406 and  
AO4406L are electrically identical.  
VDS (V) = 30V  
ID = 11.5A (VGS = 10V)  
RDS(ON) < 14m(VGS = 10V)  
RDS(ON) < 16.5m(VGS = 4.5V)  
RDS(ON) < 26m(VGS = 2.5V)  
-RoHS Compliant  
-AO4406L is Halogen Free  
UIS TESTED!  
Rg,Ciss,Coss,Crss Tested  
D
S
S
S
G
D
D
D
D
G
S
SOIC-8  
Absolute Maximum Ratings TA=25°C unless otherwise noted  
Parameter  
Symbol  
Maximum  
Units  
Drain-Source Voltage  
VDS  
30  
V
Gate-Source Voltage  
Continuous Drain  
Current AF  
VGS  
±12  
11.5  
9.6  
V
A
TA=25°C  
TA=70°C  
ID  
Pulsed Drain Current B  
Avalanche Current B  
Repetitive Avalanche Energy B L=0.3mH  
IDM  
IAV  
EAV  
80  
A
25  
mJ  
94  
TA=25°C  
3
PD  
W
°C  
TA=70°C  
Power Dissipation  
2.1  
Junction and Storage Temperature Range  
TJ, TSTG  
-55 to 150  
Thermal Characteristics  
Parameter  
Symbol  
Typ  
23  
Max  
40  
Units  
°C/W  
°C/W  
°C/W  
Maximum Junction-to-Ambient AF  
t 10s  
RθJA  
Maximum Junction-to-Ambient A  
Maximum Junction-to-Lead C  
Steady-State  
Steady-State  
48  
65  
RθJL  
12  
16  
Alpha & Omega Semiconductor, Ltd.  
www.aosmd.com  

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