Datasheet > AO4404

AO4404

更新时间： 2024-11-19 17:15:51

品牌	Logo	应用领域
友台半导体 - UMW		/
页数	文件大小	规格书
8页	461K
描述
种类:N-Channel;漏源电压（Vdss）:30V;持续漏极电流（Id）（在25°C时）:8.5A;Vgs(th)(V):±16;漏源导通电阻:20mΩ@10V;漏源导通电阻:30mΩ@4.5V

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AO4404 数据手册

UMW

AO4404

N-Channel 20V (D-S) MOSFET

Description

The AO4404 uses advanced trench technology

to provide excellent R_DS(ON), low gate charge and

operation with gate voltages as low as 4.5V. This

device is suitable for use as a

Battery protection or in other Switching application.

N-Channel MOSFET

General Features

V_DS= 30V I_D=8.5 A

R_DS(ON)< 20mΩ @ V_GS=10V

Application

Battery protection

Load switch

Uninterruptible power supply

T = 25 °C, unless otherwise noted

Absolute Maximum Ratings

Parameter

Symbol

V_DS

Limit

Unit

Drain-Source Voltage

Gate-Source Voltage

V_GS

± 16

T_C= 25 °C

_C= 70 °C

10^{b, c}

8^{b, c}

Continuous Drain Current (T_J= 150 °C)

I_D

T_A= 25 °C

T_A= 70 °C

I_DM

I_S

Pulsed Drain Current

T_C= 25 °C

T_A= 25 °C

3.7

2.0^{b, c}

Continuous Source-Drain Diode Current

I_AS

Single Pulse Avalanche Current

Avalanche Energy

L = 0.1 mH

E_AS

4.1

2.5

2.2^{b, c}

1.3^{b, c}

_C= 25 °C

T_C= 70 °C

_A= 25 °C

P_D

Maximum Power Dissipation

T_A= 70 °C

T_J, T_stg

Operating Junction and Storage Temperature Range

- 55 to 150

°C

Thermal resist ance rating

Parameter

Symbol

Typical

Maximum

Unit

Maximum Junction-to-Ambient^{b, d}

Maximum Junction-to-Foot (Drain)

R_thJA

t ≤ 10 s

Steady State

°C/W

R_thJF

Notes:

a. Base on T_C= 25 °C.

b. Surface Mounted on 1" x 1" FR4 board.

c. t = 10 s.

d. Maximum under Steady State conditions is 85 °C/W.

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