Datasheet > AO4404_08

AO4404_08

更新时间： 2024-01-19 15:19:37

品牌	Logo	应用领域
美国万代 - AOS		晶体晶体管
页数	文件大小	规格书
4页	116K
描述
N-Channel Enhancement Mode Field Effect Transistor

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AO4404_08 数据手册

AO4404

N-Channel Enhancement Mode Field Effect Transistor

General Description

Features

The AO4404/L uses advanced trench technology to

provide excellent R_DS(ON), low gate charge and

operation with gate voltages as low as 2.5V. This

device is suitable for use as a load switch or in PWM

applications. The source leads are separated to allow

a Kelvin connection to the source, which may be used

to bypass the source inductance. AO4404 and

AO4404L are electrically identical.

V_DS(V) = 30V

I_D= 8.5A (V_GS= 10V)

_DS(ON)< 24mΩ (V_GS= 10V)

R_DS(ON)< 30mΩ (V_GS= 4.5V)

_DS(ON)< 48mΩ (V_GS= 2.5V)

UIS TESTED!

Rg,Ciss,Coss,Crss Tested

-RoHS Compliant

-AO4404L is Halogen Free

SOIC-8

Absolute Maximum Ratings T_A=25°C unless otherwise noted

Parameter

Symbol

Maximum

Units

V_DS

Drain-Source Voltage

V_GS

Gate-Source Voltage

Continuous Drain

Current ^AF

±12

T_A=25°C

T_A=70°C

8.5

I_D

7.1

Pulsed Drain Current ^B

I_DM

T_A=25°C

T_A=70°C

2.1

P_D

Power Dissipation

Avalanche Current ^B

I_AR

Repetitive avalanche energy 0.3mH ^B

E_AR

°C

T_J, T_STG

Junction and Storage Temperature Range

-55 to 150

Thermal Characteristics

Parameter

Symbol

Typ

Max

Units

°C/W

Maximum Junction-to-Ambient ^AF

t ≤ 10s

R_θJA

Maximum Junction-to-Ambient ^A

Maximum Junction-to-Lead ^C

Steady-State

R_θJL

Alpha & Omega Semiconductor, Ltd.

www.aosmd.com

12 3 4

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