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AO4405 PDF预览

AO4405

更新时间: 2024-11-17 22:05:43
品牌 Logo 应用领域
阿尔法 - ALPHA 晶体晶体管场效应晶体管
页数 文件大小 规格书
4页 114K
描述
P-Channel Enhancement Mode Field Effect Transistor

AO4405 数据手册

 浏览型号AO4405的Datasheet PDF文件第2页浏览型号AO4405的Datasheet PDF文件第3页浏览型号AO4405的Datasheet PDF文件第4页 
Rev 3: Nov 2004  
AO4405, AO4405L ( Green Product )  
P-Channel Enhancement Mode Field Effect Transistor  
General Description  
Features  
The AO4405 uses advanced trench technology to  
provide excellent RDS(ON) with low gate charge. This  
device is suitable for use as a load switch or in PWM  
applications. AO4405L( Green Product ) is offered in  
a lead-free package.  
VDS (V) = -30V  
ID = -6.0A  
RDS(ON) < 50m(VGS = -10V)  
RDS(ON) < 85m(VGS = -4.5V)  
D
S
SOIC-8  
Top View  
S
S
S
G
D
D
D
D
G
Absolute Maximum Ratings TA=25°C unless otherwise noted  
Parameter  
Symbol  
VDS  
Maximum  
-30  
Units  
V
V
Drain-Source Voltage  
Gate-Source Voltage  
Continuous Drain  
Current A  
VGS  
±20  
TA=25°C  
TA=70°C  
-6.0  
ID  
-5.1  
A
Pulsed Drain Current B  
IDM  
-30  
TA=25°C  
TA=70°C  
3
PD  
W
Power Dissipation A  
2.1  
TJ, TSTG  
Junction and Storage Temperature Range  
-55 to 150  
°C  
Thermal Characteristics  
Parameter  
Maximum Junction-to-Ambient A  
Maximum Junction-to-Ambient A  
Maximum Junction-to-Lead C  
Symbol  
Typ  
31  
59  
Max  
40  
75  
Units  
°C/W  
°C/W  
°C/W  
t 10s  
Steady-State  
Steady-State  
RθJA  
RθJL  
16  
24  
Alpha & Omega Semiconductor, Ltd.  

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