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AO4404A PDF预览

AO4404A

更新时间: 2024-01-21 02:55:42
品牌 Logo 应用领域
美国万代 - AOS 晶体晶体管
页数 文件大小 规格书
4页 134K
描述
N-Channel Enhancement Mode Field Effect Transistor

AO4404A 技术参数

生命周期:Obsolete包装说明:,
Reach Compliance Code:compliant风险等级:5.58
Base Number Matches:1

AO4404A 数据手册

 浏览型号AO4404A的Datasheet PDF文件第2页浏览型号AO4404A的Datasheet PDF文件第3页浏览型号AO4404A的Datasheet PDF文件第4页 
AO4404A  
N-Channel Enhancement Mode Field Effect Transistor  
General Description  
Features  
The AO4404A uses advanced trench technology to  
provide excellent RDS(ON), low gate charge and  
operation with gate voltages as low as 2.5V. This  
device is suitable for use as a load switch or in PWM  
applications. The source leads are separated to allow  
a Kelvin connection to the source, which may be  
used to bypass the source inductance. Standard  
Product AO4404A is Pb-free (meets ROHS & Sony  
259 specifications). AO4404AL is a Green Product  
ordering option. AO4404A and AO4404AL are  
electrically identical.  
VDS (V) = 30V  
ID = 8.5A (VGS = 10V)  
RDS(ON) < 24m(VGS = 10V)  
RDS(ON) < 30m(VGS = 4.5V)  
RDS(ON) < 48m(VGS = 2.5V)  
D
S
S
S
G
D
D
D
D
G
SOIC-8  
S
Absolute Maximum Ratings TA=25°C unless otherwise noted  
Parameter  
Symbol  
Maximum  
Units  
VDS  
Drain-Source Voltage  
30  
V
VGS  
Gate-Source Voltage  
Continuous Drain  
Current A  
±12  
8.5  
V
A
TA=25°C  
TA=70°C  
ID  
7.1  
Pulsed Drain Current B  
IDM  
60  
TA=25°C  
TA=70°C  
2.8  
PD  
W
Power Dissipation  
1.8  
TJ, TSTG  
Junction and Storage Temperature Range  
-55 to 150  
°C  
Thermal Characteristics  
Parameter  
Maximum Junction-to-Ambient A  
Maximum Junction-to-Ambient A  
Maximum Junction-to-Lead C  
Symbol  
Typ  
37  
Max  
45  
Units  
°C/W  
°C/W  
°C/W  
t 10s  
RθJA  
Steady-State  
Steady-State  
70  
100  
36  
RθJL  
26  
Alpha & Omega Semiconductor, Ltd.  

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种类:P-Channel;漏源电压(Vdss):-30V;持续漏极电流(Id)(在25°C