Datasheet > AO4405

AO4405

更新时间： 2024-06-04 19:40:14

品牌	Logo	应用领域
友台半导体 - UMW		/
页数	文件大小	规格书
8页	489K
描述
种类:P-Channel;漏源电压（Vdss）:-30V;持续漏极电流（Id）（在25°C时）:-6 A;Vgs(th)(V):±20;漏源导通电阻:45mΩ@-10V

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AO4405 数据手册

UMW

AO4405

P-Channel MOSFET

General Description

The AO4405 uses advanced trench technology to provide

excellent R_DS(ON)with low gate charge. This device is

suitable for use as a load switch or in PWM applications.

General Features

V_DS= -30V I_D= -6 A

R_DS(ON)< 45mΩ @ V_GS=10V

Application

Battery protection

Load switch

Uninterruptible power supply

Absolute Maximum Ratings T_A=25°C unless otherwise noted

Parameter

Symbol

Maximum

Units

Drain-Source Voltage

V_DS

-30

Gate-Source Voltage

V_GS

±20

T_A=25°C

T_A=70°C

-6

-5.1

-30

Continuous Drain

Current

Pulsed Drain Current ^C

Avalanche Current ^C

I_D

I_DM

I_AS, I_AR

E_AS, E_AR

V_SPIKE

Avalanche energy L=0.1mH ^C

V_DSSpike

10ꢀs

-36

T_A=25°C

T_A=70°C

3.1

P_D

°C

Power Dissipation ^B

Junction and Storage Temperature Range

T_J, T_STG

-55 to 150

Thermal Characteristics

Parameter

Symbol

Typ

Max

Units

°C/W

Maximum Junction-to-Ambient ^A

t ≤ 10s

R_θJA

Maximum Junction-to-Ambient ^{A D}

Maximum Junction-to-Lead

Steady-State

R_θJL

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