Datasheet > AO4404B_11

AO4404B_11

更新时间： 2024-01-07 15:37:03

品牌	Logo	应用领域
美国万代 - AOS		/
页数	文件大小	规格书
6页	566K
描述
30V N-Channel MOSFET

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中文翻译

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数据手册

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AO4404B_11 数据手册

AO4404B

30V N-Channel MOSFET

General Description

Product Summary

V_DS

30V

The AO4404B uses advanced trench technology to

provide excellent R_DS(ON), low gate charge and operation

with gate voltages as low as 2.5V. This device makes an

excellent high side switch for notebook CPU core DC-DC

conversion.

I_D(at V_GS=10V)

R_DS(ON)(at V_GS=10V)

8.5A

< 24mΩ

< 30mΩ

< 48mΩ

R_DS(ON)(at V_GS= 4.5V)

R_DS(ON)(at V_GS= 2.5V)

100% UIS Tested

100% R_gTested

SOIC-8

Top View

Bottom View

Absolute Maximum Ratings T_A=25°C unless otherwise noted

Parameter

Symbol

V_DS

Maximum

Units

Drain-Source Voltage

Gate-Source Voltage

V_GS

±12

T_A=25°C

T_A=70°C

8.5

Continuous Drain

Current

I_D

7.1

Pulsed Drain Current ^C

I_DM

Avalanche Current ^C

I_AS, I_AR

E_AS, E_AR

Avalanche energy L=0.1mH ^C

T_A=25°C

Power Dissipation ^B

3.1

P_D

°C

T_A=70°C

Junction and Storage Temperature Range

T_J, T_STG

-55 to 150

Thermal Characteristics

Parameter

Symbol

Typ

Max

Units

°C/W

Maximum Junction-to-Ambient ^A

Maximum Junction-to-Ambient ^{A D}

Maximum Junction-to-Lead

≤ 10s

R_θJA

Steady-State

R_θJL

Rev 3: Dec 2011

www.aosmd.com

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