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AO4404B PDF预览

AO4404B

更新时间: 2024-11-18 03:45:31
品牌 Logo 应用领域
美国万代 - AOS 晶体小信号场效应晶体管开关光电二极管
页数 文件大小 规格书
4页 112K
描述
N-Channel Enhancement Mode Field Effect Transistor

AO4404B 技术参数

生命周期:Not Recommended零件包装代码:SOT
包装说明:SMALL OUTLINE, R-PDSO-G8针数:8
Reach Compliance Code:compliantECCN代码:EAR99
风险等级:7.78Is Samacsys:N
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:30 V
最大漏极电流 (ID):8.5 A最大漏源导通电阻:0.03 Ω
FET 技术:METAL-OXIDE SEMICONDUCTOR最大反馈电容 (Crss):70 pF
JESD-30 代码:R-PDSO-G8元件数量:1
端子数量:8工作模式:ENHANCEMENT MODE
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE极性/信道类型:N-CHANNEL
认证状态:Not Qualified表面贴装:YES
端子形式:GULL WING端子位置:DUAL
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

AO4404B 数据手册

 浏览型号AO4404B的Datasheet PDF文件第2页浏览型号AO4404B的Datasheet PDF文件第3页浏览型号AO4404B的Datasheet PDF文件第4页 
AO4404B  
N-Channel Enhancement Mode Field Effect Transistor  
General Description  
Features  
The AO4404B uses advanced trench technology to  
provide excellent RDS(ON), low gate charge and  
operation with gate voltages as low as 2.5V. This  
device is suitable for use as a load switch or in PWM  
applications. The source leads are separated to allow  
a Kelvin connection to the source, which may be used  
to bypass the source inductance. Standard Product  
AO4404B is Pb-free (meets ROHS & Sony 259  
specifications).  
VDS (V) = 30V  
ID = 8.5A (VGS = 10V)  
R
DS(ON) < 24m(VGS = 10V)  
RDS(ON) < 30m(VGS = 4.5V)  
DS(ON) < 48m(VGS = 2.5V)  
R
UIS TESTED!  
Rg,Ciss,Coss,Crss Tested  
D
S
S
S
S
G
D
D
D
D
G
SOIC-8  
Absolute Maximum Ratings TA=25°C unless otherwise noted  
Parameter  
Symbol  
Maximum  
Units  
VDS  
Drain-Source Voltage  
30  
V
VGS  
Gate-Source Voltage  
Continuous Drain  
Current AF  
±12  
8.5  
V
A
TA=25°C  
TA=70°C  
ID  
7.1  
Pulsed Drain Current B  
IDM  
60  
TA=25°C  
TA=70°C  
2.8  
PD  
W
Power Dissipation  
1.8  
Avalanche Current B  
IAR  
15  
A
Repetitive avalanche energy 0.3mH B  
EAR  
34  
mJ  
°C  
TJ, TSTG  
Junction and Storage Temperature Range  
-55 to 150  
Thermal Characteristics  
Parameter  
Symbol  
Typ  
37  
Max  
45  
Units  
°C/W  
°C/W  
°C/W  
Maximum Junction-to-Ambient AF  
t 10s  
RθJA  
Maximum Junction-to-Ambient A  
Maximum Junction-to-Lead C  
70  
100  
36  
Steady-State  
Steady-State  
RθJL  
26  
Alpha & Omega Semiconductor, Ltd.  

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