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AO4404

更新时间: 2024-01-31 17:39:06
品牌 Logo 应用领域
美国万代 - AOS 晶体晶体管
页数 文件大小 规格书
6页 218K
描述
N-Channel Enhancement Mode Field Effect Transistor

AO4404 技术参数

生命周期:Obsolete包装说明:,
Reach Compliance Code:unknown风险等级:5.56
Base Number Matches:1

AO4404 数据手册

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July 2001  
AO4404  
N-Channel Enhancement Mode Field Effect Transistor  
General Description  
Features  
The AO4404 uses advanced trench technology to  
provide excellent RDS(ON), low gate charge and  
operation with gate voltages as low as 2.5V. This  
device is suitable for use as a load switch or in  
PWM applications. The source leads are separated  
to allow a Kelvin connection to the source, which  
may be used to bypass the source inductance.  
VDS (V) = 30V  
ID = 8.5A  
R
R
R
DS(ON) < 24m(VGS = 10V)  
DS(ON) < 30m(VGS = 4.5V)  
DS(ON) < 48m(VGS = 2.5V)  
D
S
S
S
S
G
D
D
D
D
G
SOIC-8  
Absolute Maximum Ratings TA=25°C unless otherwise noted  
Parameter  
Symbol  
Maximum  
30  
Units  
VDS  
VGS  
Drain-Source Voltage  
Gate-Source Voltage  
Continuous Drain  
Current A  
V
V
±12  
8.5  
7.1  
60  
3
TA=25°C  
TA=70°C  
ID  
IDM  
A
Pulsed Drain Current B  
TA=25°C  
TA=70°C  
PD  
W
Power Dissipation  
2.1  
TJ, TSTG  
Junction and Storage Temperature Range  
-55 to 150  
°C  
Thermal Characteristics  
Parameter  
Symbol  
RθJA  
Typ  
31  
59  
16  
Max  
40  
75  
24  
Units  
°C/W  
°C/W  
°C/W  
Maximum Junction-to-Ambient A  
Maximum Junction-to-Ambient A  
Maximum Junction-to-Lead C  
t 10s  
Steady-State  
Steady-State  
RθJL  
Alpha & Omega Semiconductor, Ltd.  

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