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AO4403L PDF预览

AO4403L

更新时间: 2024-11-18 21:10:11
品牌 Logo 应用领域
美国万代 - AOS /
页数 文件大小 规格书
5页 371K
描述
Transistor

AO4403L 技术参数

生命周期:Obsolete包装说明:,
Reach Compliance Code:compliant风险等级:5.26
Base Number Matches:1

AO4403L 数据手册

 浏览型号AO4403L的Datasheet PDF文件第2页浏览型号AO4403L的Datasheet PDF文件第3页浏览型号AO4403L的Datasheet PDF文件第4页浏览型号AO4403L的Datasheet PDF文件第5页 
AO4403  
30V P-Channel MOSFET  
General Description  
Product Summary  
VDS  
-30V  
The AO4403 uses advanced trench technology to provide  
excellent RDS(ON), low gate charge and operation with gate  
voltages as low as 2.5V. This device is suitable for use as  
a load switch or in PWM applications.  
ID (at VGS=-10V)  
RDS(ON) (at VGS=-10V)  
RDS(ON) (at VGS =-4.5V)  
RDS(ON) (at VGS =-2.5V)  
-6A  
< 48m  
< 57mΩ  
< 80mΩ  
100% UIS Tested  
100% Rg Tested  
SOIC-8  
D
Top View  
Bottom View  
D
D
D
D
G
G
S
S
S
S
Absolute Maximum Ratings TA=25°C unless otherwise noted  
Parameter  
Symbol  
Maximum  
Units  
Drain-Source Voltage  
V
DS  
-30  
V
V
Gate-Source Voltage  
VGS  
±12  
TA=25°C  
TA=70°C  
-6  
Continuous Drain  
Current  
Pulsed Drain Current C  
Avalanche Current C  
ID  
A
-5  
IDM  
-30  
IAS, IAR  
EAS, EAR  
18  
A
Avalanche energy L=0.1mH C  
16  
mJ  
TA=25°C  
Power Dissipation B  
TA=70°C  
3.1  
2
PD  
W
°C  
Junction and Storage Temperature Range  
TJ, TSTG  
-55 to 150  
Thermal Characteristics  
Parameter  
Symbol  
Typ  
31  
Max  
40  
Units  
°C/W  
°C/W  
°C/W  
Maximum Junction-to-Ambient A  
Maximum Junction-to-Ambient A D  
Maximum Junction-to-Lead  
t
10s  
RθJA  
Steady-State  
Steady-State  
59  
75  
RθJL  
16  
24  
Rev 7: Mar. 2011  
www.aosmd.com  
Page 1 of 5  

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