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AO4402 PDF预览

AO4402

更新时间: 2024-11-18 12:51:27
品牌 Logo 应用领域
飞思卡尔 - FREESCALE /
页数 文件大小 规格书
6页 443K
描述
20V N-Channel MOSFET

AO4402 数据手册

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AO4402  
20V N-Channel MOSFET  
General Description  
The AO4402 combines advanced trench MOSFET technology with a low resistance package to provide  
extremely low RDS(ON)  
and battery protection applications.  
. This device is ideal for load switch  
Features  
VDS  
20V  
ID (at VGS=4.5V)  
RDS(ON) (at VGS=4.5V)  
20A  
< 5.5m  
< 7mΩ  
RDS(ON) (at VGS=2.5V)  
SOIC-8  
D
G
S
Absolute Maximum Ratings TA=25°C unless otherwise noted  
Parameter  
Symbol  
VDS  
Maximum  
Units  
Drain-Source Voltage  
Gate-Source Voltage  
20  
±12  
20  
V
V
VGS  
TA=25°C  
TA=70°C  
Continuous Drain  
Current  
ID  
16  
A
Pulsed Drain Current C  
IDM  
140  
Avalanche Current C  
IAS, IAR  
EAS, EAR  
57  
162  
A
Avalanche energy L=0.1mH C  
TA=25°C  
Power Dissipation B  
mJ  
3.1  
PD  
W
°C  
TA=70°C  
2
Junction and Storage Temperature Range  
TJ, TSTG  
-55 to 150  
Thermal Characteristics  
Parameter  
Symbol  
Typ  
31  
Max  
40  
Units  
°C/W  
°C/W  
°C/W  
Maximum Junction-to-Ambient A  
Maximum Junction-to-Ambient A D  
Maximum Junction-to-Lead  
t
10s  
RθJA  
Steady-State  
Steady-State  
59  
75  
RθJL  
16  
24  
www.freescale.net.cn  
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种类:N-Channel;漏源电压(Vdss):30V;持续漏极电流(Id)(在25°C时