Datasheet > AO4402L

AO4402L

更新时间： 2024-10-02 20:52:31

品牌	Logo	应用领域
美国万代 - AOS		/
页数	文件大小	规格书
6页	257K
描述
Transistor

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技术参数
数据手册

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AO4402L 技术参数

生命周期：	Obsolete	包装说明：	,
Reach Compliance Code：	compliant	风险等级：	5.59
Base Number Matches：	1

AO4402L 数据手册

AO4402L

20V N-Channel MOSFET

General Description

Product Summary

V_DS

The AO4402L combines advanced trench MOSFET

technology with a low resistance package to provide

extremely low R_DS(ON). This device is ideal for load switch

and battery protection applications.

20V

20A

I_D(at V_GS=4.5V)

R_DS(ON)(at V_GS=4.5V)

R_DS(ON)(at V_GS=2.5V)

< 5.5mΩ

< 7mΩ

100% UIS Tested

100% R_gTested

SOIC-8

Top View

Bottom View

Absolute Maximum Ratings T_A=25°C unless otherwise noted

Parameter

Symbol

V_DS

Maximum

Units

Drain-Source Voltage

V_GS

±12

Gate-Source Voltage

T_A=25°C

T_A=70°C

Pulsed Drain Current ^C

Continuous Drain

Current

I_D

I_DM

140

Avalanche Current ^C

I_AS, I_AR

E_AS, E_AR

Avalanche energy L=0.1mH ^C

T_A=25°C

162

3.1

P_D

Power Dissipation ^B

T_A=70°C

T_J, T_STG

Junction and Storage Temperature Range

-55 to 150

°C

Thermal Characteristics

Parameter

Symbol

Typ

Max

Units

°C/W

Maximum Junction-to-Ambient ^A

t ≤ 10s

R_θJA

Maximum Junction-to-Ambient ^{A D}

Maximum Junction-to-Lead

Steady-State

R_θJL

Rev 0: Sep 2009

www.aosmd.com

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