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AO4402G PDF预览

AO4402G

更新时间: 2024-10-02 13:05:35
品牌 Logo 应用领域
美国万代 - AOS /
页数 文件大小 规格书
6页 280K
描述
Small Signal Field-Effect Transistor, 20A I(D), 20V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SOIC-8

AO4402G 技术参数

是否Rohs认证: 符合生命周期:Active
包装说明:SMALL OUTLINE, R-PDSO-G8Reach Compliance Code:compliant
风险等级:2.28配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:20 V最大漏极电流 (ID):20 A
最大漏源导通电阻:0.0059 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JESD-30 代码:R-PDSO-G8元件数量:1
端子数量:8工作模式:ENHANCEMENT MODE
最高工作温度:150 °C最低工作温度:-55 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:N-CHANNEL表面贴装:YES
端子形式:GULL WING端子位置:DUAL
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

AO4402G 数据手册

 浏览型号AO4402G的Datasheet PDF文件第2页浏览型号AO4402G的Datasheet PDF文件第3页浏览型号AO4402G的Datasheet PDF文件第4页浏览型号AO4402G的Datasheet PDF文件第5页浏览型号AO4402G的Datasheet PDF文件第6页 
AO4402  
20V N-Channel MOSFET  
General Description  
Product Summary  
VDS  
20V  
The AO4402 combines advanced trench MOSFET  
technology with a low resistance package to provide  
extremely low RDS(ON). This device is ideal for load switch  
and battery protection applications.  
ID (at VGS=4.5V)  
RDS(ON) (at VGS=4.5V)  
RDS(ON) (at VGS=2.5V)  
20A  
< 5.5m  
< 7mΩ  
100% UIS Tested  
100% Rg Tested  
SOIC-8  
D
Top View  
Bottom View  
D
D
D
D
G
G
S
S
S
S
Absolute Maximum Ratings TA=25°C unless otherwise noted  
Parameter  
Symbol  
VDS  
Maximum  
Units  
Drain-Source Voltage  
Gate-Source Voltage  
20  
±12  
20  
V
V
VGS  
TA=25°C  
TA=70°C  
Continuous Drain  
Current  
ID  
16  
A
Pulsed Drain Current C  
IDM  
140  
Avalanche Current C  
IAS, IAR  
EAS, EAR  
57  
162  
A
Avalanche energy L=0.1mH C  
TA=25°C  
Power Dissipation B  
mJ  
3.1  
PD  
W
°C  
TA=70°C  
2
Junction and Storage Temperature Range  
TJ, TSTG  
-55 to 150  
Thermal Characteristics  
Parameter  
Symbol  
Typ  
31  
Max  
40  
Units  
°C/W  
°C/W  
°C/W  
Maximum Junction-to-Ambient A  
Maximum Junction-to-Ambient A D  
Maximum Junction-to-Lead  
t
10s  
RθJA  
Steady-State  
Steady-State  
59  
75  
RθJL  
16  
24  
Rev 1: Nov 2010  
www.aosmd.com  
Page 1 of 6  

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