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AO4354

更新时间: 2024-10-02 12:24:23
品牌 Logo 应用领域
飞思卡尔 - FREESCALE /
页数 文件大小 规格书
5页 252K
描述
30V N-Channel AlphaMOS

AO4354 数据手册

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AO4354  
30V N-Channel AlphaMOS  
General Description  
• Latest Trench Power AlphaMOS ( αMOS LV) technology  
• Very Low RDS(on) at 4.5VGS  
• Low Gate Charge  
• High Current Capability  
• RoHS and Halogen-Free Compliant  
Features  
VDS  
30V  
23A  
ID (at VGS=10V)  
RDS(ON) (at VGS=10V)  
RDS(ON) (at VGS = 4.5V)  
< 3.7m  
< 5.3mΩ  
D
G
S
Absolute Maximum Ratings TA=25°C unless otherwise noted  
Parameter  
Symbol  
Maximum  
Units  
Drain-Source Voltage  
Gate-Source Voltage  
VDS  
30  
±20  
23  
V
V
VGS  
TA=25°C  
Continuous Drain  
Current  
ID  
TA=100°C  
14  
A
Pulsed Drain Current C  
Avalanche Current C  
IDM  
174  
37  
IAS  
A
mJ  
V
Avalanche energy L=0.1mH C  
EAS  
VSPIKE  
68  
VDS Spike  
100ns  
36  
TA=25°C  
TA=100°C  
3.1  
PD  
W
°C  
Power Dissipation B  
1.2  
Junction and Storage Temperature Range  
TJ, TSTG  
-55 to 150  
Thermal Characteristics  
Parameter  
Symbol  
Typ  
31  
Max  
40  
Units  
°C/W  
°C/W  
°C/W  
Maximum Junction-to-Ambient A  
t 10s  
RθJA  
Maximum Junction-to-Ambient A D  
Maximum Junction-to-Lead  
Steady-State  
Steady-State  
59  
75  
RθJL  
16  
24  
1 / 5  
www.freescale.net.cn  

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