AO4402

更新时间： 2024-11-18 12:51:27

品牌	Logo	应用领域
美国万代 - AOS		/
页数	文件大小	规格书
6页	280K
描述
20V N-Channel MOSFET

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中文翻译

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技术参数
数据手册

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AO4402 技术参数

是否Rohs认证：	符合	生命周期：	Active
包装说明：	SOIC-8	Reach Compliance Code：	compliant
风险等级：	1.77

AO4402 数据手册

AO4402

20V N-Channel MOSFET

General Description

Product Summary

V_DS

20V

The AO4402 combines advanced trench MOSFET

technology with a low resistance package to provide

extremely low R_DS(ON). This device is ideal for load switch

and battery protection applications.

I_D(at V_GS=4.5V)

R_DS(ON)(at V_GS=4.5V)

R_DS(ON)(at V_GS=2.5V)

20A

< 5.5mΩ

< 7mΩ

100% UIS Tested

100% R_gTested

SOIC-8

Top View

Bottom View

Absolute Maximum Ratings T_A=25°C unless otherwise noted

Parameter

Symbol

V_DS

Maximum

Units

Drain-Source Voltage

Gate-Source Voltage

±12

V_GS

T_A=25°C

T_A=70°C

Continuous Drain

Current

I_D

Pulsed Drain Current ^C

I_DM

140

Avalanche Current ^C

I_AS, I_AR

E_AS, E_AR

162

Avalanche energy L=0.1mH ^C

T_A=25°C

Power Dissipation ^B

3.1

P_D

°C

T_A=70°C

Junction and Storage Temperature Range

T_J, T_STG

-55 to 150

Thermal Characteristics

Parameter

Symbol

Typ

Max

Units

°C/W

Maximum Junction-to-Ambient ^A

Maximum Junction-to-Ambient ^{A D}

Maximum Junction-to-Lead

≤ 10s

R_θJA

Steady-State

R_θJL

Rev 1: Nov 2010

www.aosmd.com

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中文翻译

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与AO4402相关器件

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